SIZ918DT Search Results
SIZ918DT Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIZ918DT-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 16A POWERPAIR | Original | 14 |
SIZ918DT Price and Stock
Vishay Siliconix SIZ918DT-T1-GE3MOSFET 2N-CH 30V 16A 8POWERPAIR |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIZ918DT-T1-GE3 | Cut Tape | 19,673 | 1 |
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SIZ918DT-T1-GE3 | 3,000 | 1 |
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Vishay Intertechnologies SIZ918DT-T1-GE3Transistor MOSFET Array Dual N-CH 30V 16A/28A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ918DT-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIZ918DT-T1-GE3 | Reel | 32 Weeks | 3,000 |
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SIZ918DT-T1-GE3 | 304 |
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SIZ918DT-T1-GE3 | 3,000 | 3,000 |
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SIZ918DT-T1-GE3 | Cut Tape | 2,023 | 1 |
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SIZ918DT-T1-GE3 | Reel | 12,000 | 3,000 |
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SIZ918DT-T1-GE3 | 3,000 |
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Get Quote | |||||||
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SIZ918DT-T1-GE3 | 33 Weeks | 3,000 |
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Buy Now |
SIZ918DT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 16 0.0145 at VGS = 4.5 V 16a 0.0037 at VGS = 10 V 28a 0.0045 at VGS = 4.5 V a 28 Qg (Typ.) a 0.0120 at VGS = 10 V |
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SiZ918DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 16 0.0145 at VGS = 4.5 V 16a 0.0037 at VGS = 10 V 28a 0.0045 at VGS = 4.5 V a 28 Qg (Typ.) a 0.0120 at VGS = 10 V |
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SiZ918DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiZ918DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the 55 °C |
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SiZ918DT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
siz918Contextual Info: New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 16 0.0145 at VGS = 4.5 V 16a 0.0037 at VGS = 10 V 28a 0.0045 at VGS = 4.5 V a 28 Qg (Typ.) a 0.0120 at VGS = 10 V |
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SiZ918DT SiZ918DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 siz918 | |
Contextual Info: New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 16 0.0145 at VGS = 4.5 V 16a 0.0037 at VGS = 10 V 28a 0.0045 at VGS = 4.5 V a 28 Qg (Typ.) a 0.0120 at VGS = 10 V |
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SiZ918DT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in |
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SiZ340DT SiZ342DT VMN-MS6927-1406 | |
sir158
Abstract: q113 SiZ340DT SiR158DP N3X3
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SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one |
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SiZ790DT SiZ914DT VMN-PT0182-1402 |