SIS7 Search Results
SIS7 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| SiS7014 | Silicon Integrated System | Single Chip 100Base-TX/10Base-TPhysical Layer Solution | Original | 2.35MB | 102 | ||
| SiS7016 | Silicon Integrated System | Fast Ethernet PCI Bus 10/100Mbps LANController with OnNow Support | Original | 2.27MB | 86 | ||
| SiS748 | Silicon Integrated System | North Bridge Chipset | Original | 3.47MB | 38 | ||
| SIS776DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 | Original | 14 | |||
| SIS778DN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 35A POWERPAK1212 | Original | 549.13KB | |||
| SIS780DN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 18A POWERPAK1212 | Original | 577.37KB | |||
| SIS782DN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 16A POWERPAK1212 | Original | 567.45KB |
SIS7 Price and Stock
POWER SEMICONDUCTORS INC PSIS 75/12Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 62A |
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PSIS 75/12 | 1 |
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Vishay Intertechnologies SIS782DN-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; 41W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS782DN-T1-GE3 | 3,000 |
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SIS782DN-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIS782DN-T1-GE3 | Reel | 3,000 |
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SIS782DN-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SIS780DN-T1-GE3Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 18A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS780DN-T1-GE3 | 1 |
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SIS780DN-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIS780DN-T1-GE3 | Reel | 3,000 |
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SIS780DN-T1-GE3 | 6,348 | 1 |
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SIS780DN-T1-GE3 | 5,078 |
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| SIS780DN-T1-GE3 | 5,078 |
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SIS780DN-T1-GE3 | 53 Weeks | 3,000 |
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Trompeter JSIS-72PATCH PANEL, BLACK PHENOLIC, INSULATED 72-POS, 19" X 3.51, JS SERIES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JSIS-72 | Bulk | 1 |
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Silicon Integrated Systems Corp SIS746FX |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS746FX | 3 |
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SIS7 Datasheets Context Search
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Contextual Info: SiS778DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sis778dnan609con8237322m+6 | |
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Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 |
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Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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sis780dn2002/95/ec2011/65/eujs709a+1 | |
W247
Abstract: SiS730S SiS730
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Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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sis782dn2002/95/ecsis782dn-t1-ge311-mar-11 | |
sis963l
Abstract: 255KI1 IT8510E 11z2103 7CN16 and pin diagram of MMC 4017 u28 sensor hall pin diagram AMD mobile sempron 80-UG5020-00A UG5001
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Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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Contextual Info: W83194BR-740 STEPLESS CLOCK FOR SIS735/740 CHIPSET 1. GENERAL DESCRIPTION The W83194BR-740 is a Clock Synthesizer for SiS 735/740 chipset. W83194BR-740 provides all clocks required for high-speed RISC or CISC microprocessor such as AMD K7, and also provides 16 |
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Contextual Info: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power |
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sis776dn2002/95/ec2011/65/eujs709a+1 | |
952703BFLF
Abstract: ICS952703 sis741 952703BF
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Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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Contextual Info: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sis782dn11-mar-11 | |
S11117Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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sis735
Abstract: crystal 6 Mhz sis 735 k7 W83194BR-740 sis 735
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w83194br-740sis735/74002/aprsis735+3 | |
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Contextual Info: TOSHIBA 2SC5257 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r MT sis7 V M V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.5dB f=2G H z H igh Gain : Gain = lOdB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYM BOL |
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Abstract: SIS755
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ics952802sis755/76048mhz12mhz+5 | |
7400 series CMOS Logic ICsContextual Info: ICS952702 Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS746/746FX style chipset Output Features: • 1 - Pair of differential open drain CPU outputs • 1 - Single-ended open drain CPU output • |
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Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SIS7535NContextual Info: SHIELDED SURFACE MOUNT POWER INDUCTOR E & E Magnetic Products Limited Drum Type, SIS7535X Series SCHEMATICS Magnetically Shielded Miniature in size and high energy storage Ideal for high current requirements of notebook, video recorders and other DC-DC conversion |
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Contextual Info: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power |
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Contextual Info: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power |
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Contextual Info: ICS952703 Preliminary Product Preview Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS741 style chipset with 964 South Bridge. Features/Benefits: • Selectable synchronous/asynchronous AGP/PCI frequency |
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ics952703mo-11895xxxx813a--04/01/05 | |