SIS7 Search Results
SIS7 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SiS7014 | Silicon Integrated System | Single Chip 100Base-TX/10Base-TPhysical Layer Solution | Original | 2.35MB | 102 | ||
SiS7016 | Silicon Integrated System | Fast Ethernet PCI Bus 10/100Mbps LANController with OnNow Support | Original | 2.27MB | 86 | ||
SiS748 | Silicon Integrated System | North Bridge Chipset | Original | 3.47MB | 38 | ||
SIS776DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 | Original | 14 | |||
SIS778DN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 35A POWERPAK1212 | Original | 549.13KB | |||
SIS780DN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 18A POWERPAK1212 | Original | 577.37KB | |||
SIS782DN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 16A POWERPAK1212 | Original | 567.45KB |
SIS7 Price and Stock
Vishay Siliconix SIS782DN-T1-GE3MOSFET N-CH 30V 16A PPAK1212-8 |
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SIS782DN-T1-GE3 | Cut Tape | 7,992 | 1 |
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Cinch Connectivity Solutions JSIS-7272-HOLE INSULATED PANEL |
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JSIS-72 | Bulk |
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JSIS-72 | 9 |
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Sullins Connector Solutions ECC15DRSI-S750CONN EDGE DUAL FMALE 30POS 0.100 |
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ECC15DRSI-S750 | Tray | 10 |
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Sullins Connector Solutions ECC17DRSI-S750CONN EDGE DUAL FMALE 34POS 0.100 |
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ECC17DRSI-S750 | Tray | 10 |
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Vishay Siliconix SIS778DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 |
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SIS778DN-T1-GE3 | Reel |
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SIS7 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS778DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiS778DN AN609, CON823 7322m 8153m 1373m 0169m 0125m 9585m 4917m | |
Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 |
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SiS778DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
W247
Abstract: SiS730S SiS730
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SiS730S 48-MHz 24-/48-MHz 300-ns 48-pin W247 SiS730 | |
Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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SiS782DN 2002/95/EC SiS782DN-T1-GE3 11-Mar-11 | |
sis963l
Abstract: 255KI1 IT8510E 11z2103 7CN16 and pin diagram of MMC 4017 u28 sensor hall pin diagram AMD mobile sempron 80-UG5020-00A UG5001
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259KIX 255KIX 37-UH0000-01 37-UH0003-01 35-UG5020-00A 35-UG5070-00A 35-UG5030-00C 35-UG5010-00B 35-UG5040-01 35-UG5000-00B sis963l 255KI1 IT8510E 11z2103 7CN16 and pin diagram of MMC 4017 u28 sensor hall pin diagram AMD mobile sempron 80-UG5020-00A UG5001 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: W83194BR-740 STEPLESS CLOCK FOR SIS735/740 CHIPSET 1. GENERAL DESCRIPTION The W83194BR-740 is a Clock Synthesizer for SiS 735/740 chipset. W83194BR-740 provides all clocks required for high-speed RISC or CISC microprocessor such as AMD K7, and also provides 16 |
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W83194BR-740 SIS735/740 W83194BR-740 | |
Contextual Info: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power |
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SiS776DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
952703BFLF
Abstract: ICS952703 sis741 952703BF
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ICS952703 952703BF 952703BFLF PVG48) 952703BFLFT 952703BFT sis741 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC SiS780DN-T1-GE3 11-Mar-11 | |
Contextual Info: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS782DN 11-Mar-11 | |
S11117Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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SiS782DN 2002/95/EC SiS782DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11117 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC SiS780DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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SiS782DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
sis735
Abstract: crystal 6 Mhz sis 735 k7 W83194BR-740 sis 735
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W83194BR-740 SIS735/740 02/Apr sis735 crystal 6 Mhz sis 735 k7 W83194BR-740 sis 735 | |
Contextual Info: TOSHIBA 2SC5257 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r MT sis7 V M V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.5dB f=2G H z H igh Gain : Gain = lOdB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYM BOL |
OCR Scan |
2SC5257 | |
6867
Abstract: SIS755
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ICS952802 SiS755/760 48MHz 12MHz 250ps 250ps ICS952802 AVDD48 48MHz/SEL12 6867 SIS755 | |
7400 series CMOS Logic ICsContextual Info: ICS952702 Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS746/746FX style chipset Output Features: • 1 - Pair of differential open drain CPU outputs • 1 - Single-ended open drain CPU output • |
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ICS952702 SiS746/746FX 48MHz 250ps 500ps MO-118 ICS952702y 7400 series CMOS Logic ICs | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC SiS780DN-T1-GE3 11-Mar-11 | |
SIS7535NContextual Info: SHIELDED SURFACE MOUNT POWER INDUCTOR E & E Magnetic Products Limited Drum Type, SIS7535X Series SCHEMATICS Magnetically Shielded Miniature in size and high energy storage Ideal for high current requirements of notebook, video recorders and other DC-DC conversion |
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SIS7535X SIS7535N-0R6R SIS7535N-1Rite: PI213 SIS7535N | |
Contextual Info: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power |
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SiS776DN 2002/95/EC SiS776DN-T1-GE3 11-Mar-11 | |
Contextual Info: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power |
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SiS776DN 2002/95/EC SiS776DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: ICS952703 Preliminary Product Preview Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS741 style chipset with 964 South Bridge. Features/Benefits: • Selectable synchronous/asynchronous AGP/PCI frequency |
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ICS952703 MO-118 95XXXX 813A--04/01/05 |