SIRECTIFIER Search Results

SBL30L30CT

Abstract: 35v smps
Contextual Info: E L E C T R O N I C The improved Low VF Schottkys Monday, 6 August 2007 Sirectifier Global Corp. SGC recently announced that the improved low Forward Voltage Drop (VF) Schottkys of 30V, 45 and 60V families. The improved alloy barrier Schottkys obtained the lowest VF characteristic to reduce the conduction loss of the SMPS application.

SB1545

Abstract: st1235 st1020 IR 2638 ST1035 sb1250 ST1535SC st-3020
Contextual Info: s Sirectifier Semiconductors N g g P Green Product Copyright 2008 Sirectifier Global Corp. All Right Reserved Introduction In BIPV Building-Integrated Photovoltaic systems, the Photovoltaic solar cells can be imbedded into standard building materials such as roofs and

SOT-227 Package

Abstract: Barksdale newark Sirectifier ITO-220
Contextual Info: E L E C T R O N I C Our Package January 2007 /Rev. 2 SOD-523 SOT-23 SOT-323 SOT-363 SOT-563 SOT-23-6 SMA SMB SMC DO-41 DO-201AD TO-126 TO-92 D-PAK D2-PAK TO-220 ITO-220 Fig. 9 Fig. 10 Fig. 12 Fig. 17 Fig. 14 Fig. 15 TO-247/ TO-3P Fig. 16 SOT-227 Sirectifier Global Corp., Delaware, U.S.A.

Contextual Info: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

Contextual Info: E L E C T R O N I C Surface Mount SMA & SMB Low VF Schottkys Friday, 2 March 2012 Sirectifier Global Corp. SGC announced that the package of SMA & SMB surface-mount SBD for the high-efficiency portable and SMPS applications. The lowest forward-drop Voltage(VF) of these between 0.35V and 0.40V at the temperature of 125°C. The followings are the already provided item

MBR40200

Abstract: MBR40150 MBR10B100FCTH MBR20B100FCTH SB3200 SB3150 MBR20B150FCTH MBR20200PT MBR20B100FCT MBR50100PT
Contextual Info: s SirectSemi N g g P Green Product Copyright 2009 Sirectifier Global Corp. All Right Reserved Barrier & Breakdown Voltage V B Electronic Characteristics (V F @ 125°C & IR @ 25°C) Pt (Platinum) Barrier, 45-200V Highest Tj (150-175°C) and lowest I R (less than 10 A)

sr 560fc

Abstract: 560FC sb360 do-27 MBR20100CT SB360 3 rectifier AC0541 MBR20100C SB56 DATE CODE ZA
Contextual Info: E L E C T R O N I C Device Marking of Power Schottky June 2005 1. DO-41/ DO-15 / DO-27 DO-201AD No Item Description 1 Brand “SR” is the condensation of Sirectifier 2 Part Number Show the part number of Sirectifier 3 Rectifier Direction To show the direction of the Cathode(-)

C989

Contextual Info: International @siRectifier Provisional Data Sheet PD-9.1184 IRGKIN075K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc =75A • Rugged Design • Simple gate-drive •Switching-Loss Ra losses • Short circuit rated Vce ON <2.7V ^ > 10^8

Contextual Info: Bulletin 12019/A International SIRectifier i 3 o h f R s e r ie s STANDARD RECOVERY DIODES Stud Version 130 A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1200V V RRM ■ S tu d c a th o d e and stu d a n o d e v e rs io n

1.2V solar garden light

Abstract: solar dc light system TO-263AC by-pass solar cell Solar Garden Light pv bypass diode
Contextual Info: E L E C T R O N I C The Application of the “By-pass” Diode for Solar Cell Monday, 19 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.

1.2V solar garden light

Abstract: Solar Garden Light diode F8 23 by-pass solar cell
Contextual Info: E L E C T R O N I C The New “By-pass” Diode Friday, 23 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.

newark

Abstract: L054BT26 15KV LR052BT14
Contextual Info: E L E C T R O N I C ESD Protector Application Friday, 18 July 2008 Sirectifier Global Corp., Delaware, U.S.A. Sales Representatives: U.S.A. 113 Barksdale Professional Center in the City of Newark, County of New Castle, Delaware e-mail: sgc@sirectsemi.com China Room 320, Building Chaohui,

Contextual Info: S3A … S3M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case Kunststoffgehäuse ~ SMC ~ DO-214AB Weight approx. – Gewicht ca.

diode IN 4007

Abstract: free download datasheet IN 4007 DO-213AB 4007 4007 diode do-213AB IN 4001 IN 4007 in 4007 diode in 4007 rectifier diode peak current of IN 4007 DO-213ab
Contextual Info: SM 4001 Q … SM 4007 Q Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case QuadroMELF Kunststoffgehäuse QuadroMELF

500 uf

Contextual Info: UF 5400 . UF 5408 Ultrafast Switching Si-Rectifiers Ultraschnelle Si-Gleichrichter Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.

marking 34A

Contextual Info: GL 34A . GL 34M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

GL1J

Abstract: minimelf marking
Contextual Info:  GL1A . GL1M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80

minimelf blue

Abstract: minimelf white violet
Contextual Info: GL 34A . GL 34M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage 0.4 3.5 0.4 1.6 Nominal current – Nennstrom Dimensions / Maße in mm 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF

sm 4007

Abstract: CA 4007
Contextual Info: SM 4001 … SM 4007 SM 513, SM 516, SM 518, SM 2000 Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…2000 V 0.5 Plastic case MELF Kunststoffgehäuse MELF

Contextual Info: Si–A 3000/1350–2.5 High Voltage Si-Rectifier Modul Si-Hochspannungs-Gleichrichter Modul Nominal current – Nennstrom 2.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case 8000 V Ø 55 x 36 [mm] Kunststoffgehäuse Weight approx. – Gewicht ca.

marking 34A

Contextual Info: EGL 34A . EGL 34G Ultrafast Switching Surface Mount Si-Rectifiers Ultraschnelle Si-Gleichrichter für die Oberflächenmontage 0.4 3.5 0.4 1.6 Nominal current – Nennstrom 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…400 V

diode 40amp

Contextual Info: E L E C T R O N I C SBL4060CT Power Schottky Rectifier - 40Amp 60Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

MBR2045CT

Abstract: MBR2045
Contextual Info: E L E C T R O N I C MBR2045CT Power Schottky Rectifier - 20Amp 45Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications-94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity