SILONEX INC Search Results

silonex NSL

Abstract: SILONEX INC
Contextual Info: SILONEX INC 4?E D Ô255271 00D03S2 0 • SXI SILONEX NSL-40 & NSL-40AA OPTOISOLATORS - w - ?t «I n c

Silonex

Abstract: SILONEX INC
Contextual Info: SILONEX INC 57E D • ÖESS271 00003bS DM3 ■ SXI

SILONEX INC

Abstract: V244 2870UK NSL-811
Contextual Info: SILONEX INC 47E D • Ô2SS271 0DDQ34b 5 ■ SXI SILONEX SILICON PLANAR PHOTODETECTORS T - y /- y ? FEATURES * Very low dark leakage current * High sensitivity * Low capacitance * H erm etic packaging * Linear response * High reliability GENERAL DESCRIPTION

Contextual Info: SILONEX INC 47E D • Ô2SSS71 D0QQ3SS b ■ SXI # SILONEX ; NSL-32 & NSL-32AA 0PT0IS0LAT0RS _ T-VZ-g/ . ANOOE .010 X .020 .254 X .508 •130 (3.302) (2.540) i 0.245 <5.969 \ 6.477) CELL LEADS J .235 ,(5.715 \ 6.223) 0.250 (6.35)

photoconductive cell cdse

Abstract: NSL-4960 MSL-5910 cds cell photoconductive cells J 6920 A 6920 Photoconductive Cell J 6920 NSL-6910
Contextual Info: SILONEX INC 47E D • Û2SS271 □□003M2 ê ■ SXI SILONEX s * r Preliminary Data Sheet T O -8 PHO TO CO NDUCTIVE CELLS — ! t -</a v / FEATURES • F iv e Photoconductive Materials

0034D

Abstract: SILONEX INC Silonex HSL-4140 silonex NSL NSL-6112 STK7348 NSL-3120 NSL-9110 NSL-3110
Contextual Info: SILONEX INC •I 47E D Ö2SS271 □□0034D SX I SILONEX I Preliminary Data Sheet TO-18 PHOTOCONDUCTIVE CELLS 4 ■ . ' _ T 7 -y /-V / FEATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 50 mW - Hermetically Sealed 5.0imW - Plastic Encapsulated

Silonex norp

Abstract: Cds silonex SILONEX INC Silonex NORP-13 NORP12 NORP-11 photoconductive cells Norp 12
Contextual Info: Ö255571 00Q03ti2 334 • S7E D SILONEX INC SXI ’T-4V-41 CO SILONEX NORP CdS PHOTOCONDUCTIVE CELLS FEATURES NORP-11,12, 13 SERIES • Maximum pow er Dissipation @ 30°C: 250mW • Resistance Tolerance: ± 40% @ 1 Ftc • Tem perature Range: - 60°C to + 75°C

NSL-4960

Abstract: photoconductive cell cdse silonex NSL cdse Photoconductive Cell Silonex NSL-395 PHOTOCELL NSL-2930 NSL-2940
Contextual Info: SILONEX INC 53E [ • ÛE55271 QDOOST? 7 ■ SILONEX i TO-8 PHOTOCONDUCTIVE CELLS f "F4|-4 FEATURES NSL-2900, 3900, 4900 SERIES • Three Photoconductive Materials TO-8 • Power Dissipation @ 25° C: 500 mW - Hermetically Sealed 250 mW - Plastic Encapsulated

CDS 140 K

Abstract: 250v ac to 100v dc Silonex
Contextual Info: SILONEX INC 47E D I Ô2SS571 GD0034G 4 SXI SILONEX I Preliminary Data Sheet TO-18 PHOTOCONDUCTIVE CELLS FEATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 50 mW - Hermetically Sealed 5DimW- Plastic Encapsulated • Resistance Tolerance: ± 40%@1 Ftc

NSL-36AA

Abstract: NSL-36 nsl36aa
Contextual Info: 47E D SILONEX INC • Û5SSS71 Q0QG353 S ■ SXI CO SILONEX NSL-36 & NSL-36AA 0PT0IS0LAT0RS T 'V /'g '/ 1 CHARACTERISTICS TEST CONDITIONS . HIH. .NSL-36. TYP. KAX. . «IH. NSI-36AA TYP. HAX. . UNITS . -IE0IF . Hax fud current VF Forward voltage IF=16aA IR

NSL-4460

Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
Contextual Info: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:

silonex NSL

Contextual Info: 47E D SILONEX INC • Ô5SS271 00003SM 4 ■ SXI ^W CO SILONEX' HSL-34 & NSL-34AA OPTOISOLATORS r - v y . CHARACTERISTICS TEST CONDITIONS . HIN. HSL-34. TYP. HAX. . HIN. NSL-34AA TYP. HAX. . . UNITS . -LEOIf .Hax fwd current VF Fornard voltage IF-16IA

photoconductive cells

Abstract: SK 3050 R NSL-9910 NSL-4962 NSL-7910 Silonex
Contextual Info: SILONEX INC M7E D • Ö2SS271 0000342 ê ■ Preliminary Data Sheet SXI r SILONEX i _ • TO -8 PHOTOCONDUCTIVE CELLS r - y /'V / FEATURES • F iv e Photoconductive Materials • Power Dissipation @ 25°C 500 mW - Hermetically Sealed .250 m W -Plastic Encapsulated

Contextual Info: SILONEX INC 47E D • SILONEX s 0255371 □□□□351 T ■ SLT-50F Series NPN SILICON PLANAR EPITAXIAL PHOTOTRANSISTORS SXI | -j-_ H h é ì General Description The SLT-50F series of silicon planar epitaxial phototransistors are available in a flat lensed,

IF20

Abstract: 71N2 SLD-70BG2 planar photodiodes Silonex SLD-67HF2A
Contextual Info: Silonex Planar Photodiodes, IREDs and Arrays Visit SilonexÕs Website at www.silonex.com Planar Photodiodes Planar, passivated silicon photodetectors designed to operate either in photovoltaic mode or in a reverse-bias mode. Available with IR and BG filters for spectral

Silonex

Abstract: NSL-4460 NSL-4450 NSL-4470 photocell 4470 FTC 580 NSL-4440 NSL-4400 NSL447 N2150
Contextual Info: SILONEX INC a a s s a ? ! ociaoan □ 23E D SILONEX £ 1 W ATT PH O TO C O N D U C TIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated

NSL-26AA

Abstract: AB5S271 Silonex SILONEX INC
Contextual Info: SILONEX INC 47E D • AB5S271 □□00357 T ■ NSL-26 & NSL-26AA OPTOISOLATORS 25.4 I. ( 10.414 \ 10.922) MIN .420 SILONEX f' ' T-W-g/ .100 ( 2 .540) ( 12.7 ) •5 r LEO MIN. L SXI I L q ,— ( CATHODE SHORT LEAD ( 5 .080) .200 r 0.019— ' (.381 \ .533)

Silonex

Abstract: NSL-892 NSL-710 F394 NSL-720 NSL-751 NSL-781 NSL-782 NSL-791 NSL-792
Contextual Info: SILONEX INC &E55271 0000310 b 23E D e u SILONEX ’ PACKAGED SILICON PHOTOVOLTAIC CELLS 4 l-S \ C FEATURES • • • • • High reliability, long life Operating Temperature Range: - 65°C to 125°C Ideal for moderate reverse bias voltage operation Short circuit current linear over wide ranges of illumination

SILONEX INC

Abstract: NSL-810 NSL-792 60N70
Contextual Info: SILONEX INC &255271 0G00310 L 23E D CO SILONEX ’ PACKAGED SILICON PHOTOVOLTAIC CELLS 4 l-S \ C FEA T U R ES • High reliability, long life • Operating Temperature Range: -6 5 ° C to 125°C • Ideal for moderate reverse bias voltage operation • Short circuit current linear over wide ranges of illumination

T4141

Abstract: NSL384 NSL485 NSL4840 NSL-4810
Contextual Info: JB255271 SO S I LONE X INC DE^fl5SSH71 00DGS1Ô 7 T-41-41 NSL-3800, 4800 SERIES SILONEX TO-5 PHOTOCONDUCTIVE C E L L S TO-5 Silonex Part No. NSL-3810 NSL-3820 NSL-3830 NSL-3840 NSL-3850 NSL-3860 NSL-3870 NSL-4810 NSL-4820 NSL-4830 NSL-4840 NSL-4850 NSL-4860

Contextual Info: SILONEX INC 47E D Ô 2 5 S 5 7 1 00003513 fl • SXI N S L -2 8 & N SL -2 8 A A CO SILONEX O P T O IS O L A T O R S T - v i- e / ■1 ill TEST CONDITIONS CHARACTERISTICS NSl-28. TYP. MX. . HIH. HSL-28AÄ TYP. HAX. . . UNITS . - •lur if . tax fwd current

Contextual Info: SILONEX 47E INC Ö2SS271 D G0DQ3SD SXI 7 SILONEX SLR-50F SERIES NPN SILICO N PLANAR EPITAXIAL PHOTODARLINGTON T'W’63 G e n e ra l D e s c r ip tio n The S ilo n e x SLR-50F NPN s i l i c o n p la n a r p h o to d a r lin g t o n s e r i e s i s mounted in a TO-18 f l a t

Contextual Info: SLSD-71N2 SILONEX Solderable Planar Photodiode Features • Visible to IR spectral range • High reliability, oxide passivation • High open circuit voltage • Linear short circuit current • Low capacitance, high speed • Solderable contacts .040 + /- . 010*

nsl70

Abstract: SILONEX INC
Contextual Info: ’SILONEX INC 23E 0 • ÛSSS5 71 GDG0314 3_ ■ CO SILONEX ! SILICON PHOTOVOLTAIC C E L L S Ï - ^ , 1 , <r, FEATURES • • • • Fast response High reliability, long life Protective, humidity resistant coating Operating Temperature Range: -6 5 °C to 1258C