SILICONIX APPLICATION NOTES Search Results

POWER MOSFET APPLICATION NOTE

Abstract: mosfet reliability testing report transistor testing using multimeter vishay transistor date code APPLICATION OF E AND D MOSFET failure analysis power MOSFET reliability report siliconix 2n2222a REPLACEMENT CQA004
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN840 “The Next Step” for Failure Analysis of Vishay Siliconix Power MOSFET By Kandarp Pandya These guidelines chronologically cover most pertinent aspects and information for a proficient and valuable failure

INT-936

Abstract: INTDT93-4 AN949 AN-949
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN-949 Current Rating of Power Semiconductors TABLE OF CONTENTS Page What Is Current Rating?. 2

V30114

Abstract: DFN-10 MLP33-10 MLP33-8 PLCC-20 SOIC-16 soic 8l ep SC75-6L
Contextual Info: Reel Information Vishay Siliconix LOK REEL T W Measured at hub Ø 20.5 ± 0.2 Ø 13.0 ± 0.2 H Ø 2.0 ± 0.5 Notes: 1. Material: antistatic plastic (high impact polystyrene) 2. Shelf Life: 2 years 3. Color: any color is acceptable 120° Typ. VER -1 APPLICATION

Si3460DV

Abstract: Si4866 SiP21301 SUD40N02-08 "bias control" ldo
Contextual Info: SiP21301 Vishay Siliconix Series Linear Regulator Controller DESCRIPTION FEATURES SiP21301 is a single channel series regulator controller to drive N-Channel MOSFET. It is the perfect choice for the low voltage, high current application. This controller provides the complete features, such as

mosfet 7660

Abstract: Si7658DP PF435
Contextual Info: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74879 datasheet

Abstract: 74879 Si2316BDS
Contextual Info: SPICE Device Model Si2316BDS Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

p-channel 2.5v g-s mosfet

Abstract: S50411
Contextual Info: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

V745

Abstract: si7154dp a4940
Contextual Info: SPICE Device Model Si7154DP Vishay Siliconix N-Channel 20V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9942-Si9430

Abstract: brake rectifier motor si9993 Spindle VCM 80C196 Si9430 Si9993CS HDD 3 PIN BRUSHLESS motor power supply Hall Siemens vcm controller
Contextual Info: Si9993CS Vishay Siliconix Si9993 12-V VCM/Spindle Motor Driver for Large Capacity HDD FEATURES • 12-V Motor Supply • Blocking Schottky Diode Replaced by External Synchronous Rectifier • Spindle Motor Driver Features: – External LITTLE FOOT Drivers for High Current/Power Application

Si4473DY

Contextual Info: Si4473DY New Product Vishay Siliconix P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –13 APPLICATION 0.016 @ VGS = –2.5 V –11 D Battery Switch for Portable Equipment –14

Contextual Info: SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application

Contextual Info: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

a14s

Abstract: Si3447DV
Contextual Info: SPICE Device Model Si3447DV Vishay Siliconix P-Channel 1.8V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7423DN

Contextual Info: SPICE Device Model Si7423DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4473DY

Abstract: Si4473DY-T1
Contextual Info: Si4473DY Vishay Siliconix P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 APPLICATION 0.016 @ VGS = −2.5 V −11 D Battery Switch for Portable Equipment SO-8 S S

Si4911DY

Contextual Info: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3433BDV

Contextual Info: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1039X

Abstract: S5015
Contextual Info: SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

73145

Abstract: Si7386DP
Contextual Info: SPICE Device Model Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50P10-43L

Abstract: SUD50P10 73,467
Contextual Info: SPICE Device Model SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

71524

Contextual Info: SPICE Device Model Si3430DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7469DP

Contextual Info: SPICE Device Model Si7469DP Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7309

Abstract: Si7309dn
Contextual Info: SPICE Device Model Si7309DN Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74124

Abstract: Si8404DB 74124 application note 184 324 DIODE si84
Contextual Info: SPICE Device Model Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range