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    SILICONIX AN806 Search Results

    SILICONIX AN806 Datasheets Context Search

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    MOSFET TSSOP-8

    Abstract: TSSOP-8 footprint leadframe materials "MOSFET TSSOP-8" TSSOP-8 siliconix an806
    Contextual Info: AN806 Vishay Siliconix Mounting LITTLE FOOTR TSSOP-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices.


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    AN806 17-Dec-03 MOSFET TSSOP-8 TSSOP-8 footprint leadframe materials "MOSFET TSSOP-8" TSSOP-8 siliconix an806 PDF

    TSSOP-8 footprint

    Abstract: MOSFET TSSOP-8 leadframe materials "MOSFET TSSOP-8" 8 pins mosfet
    Contextual Info: AN806 Vishay Siliconix Mounting LITTLE FOOTR TSSOP-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices.


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    AN806 18-Jul-00 TSSOP-8 footprint MOSFET TSSOP-8 leadframe materials "MOSFET TSSOP-8" 8 pins mosfet PDF

    s8105

    Abstract: SI6943
    Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8105 SI6943 PDF

    Contextual Info: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


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    Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


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    Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


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    Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS


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    Si6981DQ Si6981DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6913DQ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.021 at VGS = - 4.5 V - 5.8 0.028 at VGS = - 2.5 V - 5.0 0.037 at VGS = - 1.8 V - 4.4 • TrenchFET Power MOSFETs • Material categorization:


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    Si6913DQ Si6913DQ-T1-E3 Si6913DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6913DQ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 12 ID (A) 0.021 at VGS = - 4.5 V - 5.8 0.028 at VGS = - 2.5 V - 5.0 0.037 at VGS = - 1.8 V - 4.4 • TrenchFET Power MOSFETs • Material categorization:


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    Si6913DQ Si6913DQ-T1-E3 Si6913DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AN1001 equivalent

    Contextual Info: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS


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    Si6981DQ Si6981DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN1001 equivalent PDF

    Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs


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    Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6459BDQ Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.115 at VGS = - 10 V - 2.7 0.150 at VGS = - 4.5 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    Si6459BDQ 2002/95/EC Si6459BDQ-T1-GE3 11-Mar-11 PDF

    A1818

    Contextual Info: Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.010 at VGS = - 4.5 V - 8.8 - 20 0.013 at VGS = - 2.5 V - 7.6 0.016 at VGS = - 1.8 V - 6.8 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT


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    Si6413DQ Si6413DQ-T1-GE3 11-Mar-11 A1818 PDF

    Contextual Info: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch


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    Si6993DQ Si6993DQ-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si6459BDQ Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.115 at VGS = - 10 V - 2.7 0.150 at VGS = - 4.5 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    Si6459BDQ 2002/95/EC Si6459BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


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    Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition


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    Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs


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    Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


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    Si6473DQ Si6473DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


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    Si6423DQ Si6423DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    A1818

    Contextual Info: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 8.0 0.0155 at VGS = - 2.5 V - 7.0 0.020 at VGS = - 1.8 V - 6.0 • Halogen-free • TrenchFET Power MOSFETs Pb-free


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    Si6467BDQ Si6467BDQ-T1 Si6467BDQ-T1-GE3 11-Mar-11 A1818 PDF