SILICON VOLTAGE REFERENCE DIODES Search Results

4116 dram

Abstract: Silicon PIN diode high speed pin diagram of ic 4141 2QSP24 MO-137
Contextual Info: PL IA NT Features S oH *R 24Q DTA 2 005 041 CO M • ■ ■ ■ ■ Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23 packages ■ ■ Low forward voltage 2 options available

LM236-5

Abstract: LM136-2.5
Contextual Info: LM136-5.0 LM136-5.0 LM236-5.0 LM336-5.0 5.0V Reference Diode Literature Number: SNVS750C 5.0V Reference Diode General Description The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient

DAP202U

Abstract: DAP202UG DAP222 DAP222G DAP222T1 DAP222T1G
Contextual Info: DAP222, DAP202U Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC−75/SOT−416 package which is

LM-1130

Abstract: LM313H LM313 C1995 H02A LM113 LM113-1 LM113-1H LM113-2H LM113H
Contextual Info: LM113 LM313 Reference Diode General Description The LM113 LM313 are temperature compensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature

Contextual Info: DF3D6.8MFV ESD Protection Diodes Silicon Epitaxial Planar DF3D6.8MFV 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: HZK Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply HITACHI ADE-208-126B Z Rev. 2 Jul. 1994 Features • Low leakage, low zener impedance and maximum power dissipation of 500mW. • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.

NS sot-23

Abstract: NSVBAT54
Contextual Info: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: DF2S24FS ESD Protection Diodes Silicon Epitaxial Planar DF2S24FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

SAFETY barrier 2896

Abstract: A140 FMKA140
Contextual Info: FMKA140 SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a

L6234

Abstract: L6234PD
Contextual Info: L6234 Three phase motor driver Features • Supply voltage from 7 to 52 V ■ 5 A peak current ■ RDSon 0.3 Ω typ. value at 25 °C ■ Cross conduction protection ■ TTL compatible driver ■ Operating frequency up to 150 kHz ■ Thermal shutdown ■ Intrinsic fast free wheeling diodes

Contextual Info: Variable Capacitance Diodes MA27376 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Junction temperature Storage temperatur Symbol Rating Unit VR 6 V Tj 125 °C Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

Contextual Info: Schottky Barrier Diodes SBD MA3G762 (MA762) Silicon epitaxial planar type (cathode common) Unit : mm 16.2 ± 0.5 5.0 ± 0.2 3.2 ± 0.2 φ 3.2 ± 0.1 15.0 ± 0.2 • Forward current (average) IF(AV): 20 A type • Repetitive peak reverse voltage VRRM: 90 V type

RB160VA-40

Contextual Info: RB160VA-40 Diodes Schottky barrier diode RB160VA-40 z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications General rectification 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 zFeatures 1) Small mold type. (TUMD2) 2) Low IF, Low IR. 3) High reliability.

MA2QD01

Contextual Info: Schottky Barrier Diodes SBD MA2QD01 Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • VR = 60 V is guaranteed • New Mini-power 2-pin package

SMP1307-027

Abstract: pj marking smp1307-011lf SMP1307 SMP1307-001 SMP1307-001LF SMP1307-004 SMP1307-005 SMP1307-011 5.6 SOT-5
Contextual Info: DATA SHEET SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features Low distortion design Frequency range from HF to > 2 GHz ● Designed for CATV AGC applications ● Designed for high volume wireless applications ● ● Description

RB481Y-90

Abstract: SC-75A
Contextual Info: RB481Y-90 Diodes Schottky barrier diode RB481Y-90 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 (1) zConstruction Silicon epitaxial planar 1.6±0.1 1.6±0.05 zFeatures

RF051VA2S

Contextual Info: RF051VA2S Diodes Fast recovery diode RF051VA2S zDimensions Unit : mm zLand size figure (Unit : mm) 1.1 0.17±0.1 0.05 zFeatures 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. 0.8 0.5 1.9±0.1 2.0 1.3±0.05 2.5±0.2 zApplications

RB160L-60

Contextual Info: RB160L-60 Diodes Schottky barrier diode RB160L-60 zApplications General rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 2.0 2.0 2.6±0.2 1.2±0.3 4 ② 4.5±0.2 4 ① 0.1±0.02 0.1 5.0±0.3 4.2 zFeatures 1) Small power mold type. (PMDS)

RB051LA-40

Contextual Info: RB051LA-40 Diodes Schottky barrier diode RB051LA-40 zExternal dimensions Unit : mm 1.5±0.2 0.2± 0.15 0.1 2.0 1.4 CATHODE MARK mold 4.7±0.3 1.4 3.8±0.2 zFeatures 1) Small and Thin power type (PMDT) 2) High reliability. 3) Low IR zLand size figure (Unit : mm)

RB160M-90

Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR

SMMBD701LT1G

Contextual Info: MBD701, MMBD701L, SMMBD701L Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes http://onsemi.com These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

IMBD4148V-GS08

Contextual Info: IMBD4148-V Vishay Semiconductors Small Signal Switching Diode Features 3 • Silicon Epitaxial Planar Diodes • Fast switching diode in case SOT-23, especially suited for automatic insertion. • This diodes are also available in other case styles including: the DO-35 case

YSI 44007

Abstract: Thermistor 44007 YSI 44034 LT1025 44007 LT1006 LTC1050 LTC1090 LTC1091 20C40C
Contextual Info: i Jj Jim iL V A ^ JT E C H ijJO U O p ^ DESIGN NOTES Number 5 in a series from Linear Technology Corporation March, 1989 Temperature Measurement Using the LTC1090/91/92 Series of Data Acquisition Systems William Rempfer Guy Hoover Introduction Accurate temperature measurement is a difficult and very the LTC1090 family are just right for most temperature sens­

mmbz27vclt1g

Abstract: SAE J2411 MMBZ15VDLT1 J2411 MMBZ15VDLT1G MMBZ27VCLT1 27C zener MMBZ15VDLT3 MMBZ15VDLT3G automotive ecu manual
Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They