SILICON SYSTEMS Search Results

silicon power 8GB

Abstract: silicon power 2GB silicon power 1GB silicon power 4GB TDK GBDriver 8GB Nand flash hard disk spindle
Contextual Info: 1/1 TDK Silicon Disk GBDisk Series Conformity to RoHS Directive Silicon Disks for Industrial Applications/Embedded Systems 1GB, 2GB, 4GB, 8GB With the increased capacity and price reductions now seen in the NAND-type flash memory, the silicon disk is a rapidly rising contender

MPC850

Abstract: PA13 PB25
Contextual Info: Consumer Systems Group MPC850 Device Errata MPC850 Silicon Revision A—Mask Set 0H98G May 15, 1998 Version 1 These errata apply to the MPC850 Revision A (CDR2) silicon. Those errata that are currently scheduled to be addressed in the future revision of the silicon are so marked.

TMS320C6713pyp

Abstract: SPRS186 TMS320C6713 ccfg C6713 SPRU190 TMS320C6000 TMS320C6713 TMS320C6713B TMS320c6713 hpi mcbsp
Contextual Info: TMS320C6713, TMS320C6713B Digital Signal Processors Silicon Errata C6713 Silicon Revision 1.1 C6713B Silicon Revision 2.0 SPRZ191G December 2002 Revised May 2004 Copyright  2004, Texas Instruments Incorporated TMS320C6713, TMS320C6713B Silicon Errata SPRZ191G

SCS120AGC

Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
Contextual Info: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have

Marking W3

Abstract: NE5511279A-A NE5511279A-T1A
Contextual Info: SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology

Contextual Info: UbE D SILICON SYSTEMS INC • aaSB'ibS Q00S27b 0 ■ SIL T -Y 2-7? CUSTOM SOLUTIONS s m m s iis k m s A TDK Group/Company SILICON SYSTEMS LEADS THE WAY DEVELOPING MIXED-SIGNAL CUSTOM PRODUCTS. Faster to market for mixed-signal applications Whatever your mixed-signal design application, Silicon

TMS320C6000

Abstract: TMS320C6712 TMS320C6712C TMS320C6712D Global cache operations 0x0000FFF8 gdp compiled
Contextual Info: TMS320C6712, TMS320C6712C, TMS320C6712D Digital Signal Processors Silicon Errata C6712 Silicon Revisions 1.0, 1.2, 1.3 C6712C Silicon Revision 1.1 C6712D Silicon Revision 2.0 SPRZ182L May 2001 Revised March 2004 Copyright  2004, Texas Instruments Incorporated

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic

ATC100A101JW

Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
Contextual Info: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology

ATC100A101JW

Abstract: NE5531079A GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW
Contextual Info: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and

NE5531079A-T1-A

Abstract: ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a

NE5511279A

Abstract: NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and

2n6240

Abstract: 2N6240 equivalent
Contextual Info: 2N6240 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Silicon controlled rectifiers PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where

NTE317

Abstract: 3 w RF POWER TRANSISTOR NPN NPN planar RF transistor
Contextual Info: NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe

amd elan sc520

Abstract: amd elan sc400 LCD 640X200 block diagram of mri machine SC300 AMD LCD for mobile phone amd 486 Am386 am486 Block Diagram pic microcontroller family
Contextual Info: Systems in Silicon High Performance 70 Élan SC400 Am486 PC/AT-based Microcontroller Management Overview Advanced Micro Devices, Inc. Embedded Processor Division AMD Embedded Processor Division, Élan Family Overview 1 Presentation Outline Systems in Silicon

8254 aa

Abstract: mini project using PIC microcontroller gsm modem pic interface block diagram tv lcd panel elan 5000 flash disk pcmcia 8mb 4MB flash bios chip 8 pin MAX241 real time microcontroller 8254 applications pico bios
Contextual Info: Systems in Silicon High Performance Élan Family TM Technical Overview ÉlanSC400, ÉlanSC410, ÉlanSC300 and ÉlanSC310 AMD Embedded Processor Division, Élan Family Technical Overview AMD Élan Family Systems in Silicon Proposed P class X5 integrated 160MHz

Contextual Info: Central Semiconductor Corp. CMPS5064 DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CMPS5064 type is an epoxy molded PNPN Silicon Controlled Rectifier manufactured in an SOT-23 case, designed for control systems and sensing circuit applications.

NPN planar RF transistor

Abstract: NTE317
Contextual Info: NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe

"embedded systems" ethernet protocol

Abstract: FusionE86 Am186CC "USB" peripheral
Contextual Info: Systems in Silicon Comm 86 Microcontroller Family Management Presentation Advanced Micro Devices, Inc. Embedded Processor Division Embedded Processor Division Systems in Silicon After 15+ years in the communications market. .it’s almost impossible to make a

8052 pin structure

Abstract: architecture of 8052 73D2910 AT 8052 8052 microcontroller instruction set microcontroller 8052 USR24
Contextual Info: SSI 73D2910 ¿mcmsitshns Microcontroller A TDK Group/Company Advance Information December 1993 DESCRIPTION FEATURES The Silicon Systems 73D2910 high performance microcontroller is based on the industry standard 8-bit 8052 implemented in Silicon Systems’ advanced

NTE318

Abstract: NPN planar RF transistor RF POWER TRANSISTOR NPN
Contextual Info: NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.

80C186

Contextual Info: Systems in Silicon Am186ED Microcontroller 386-class performance, enhanced system integration, lower system cost, with a built-in DRAM controller AMD Embedded Processor Division, Am186ED Overview Why x86? Systems in Silicon • Industry leader in development tools

pulse width demodulation

Abstract: 80C186 interrupt in embedded system
Contextual Info: Systems in Silicon Am186EM Technical Features AMD Embedded Processor Division, Am186EM Technical Overview Am186 System Evolution Systems in Silicon 80C186 Based 3.37 MIP System Internal External Am186EM Based 5.35 MIP System CPU CPU Basic Basic System System

FusionE86

Abstract: IOM2
Contextual Info: Systems in Silicon Comm 86 Microcontroller Family Technical Presentation Advanced Micro Devices, Inc. Embedded Processor Division Embedded Processor Division Systems in Silicon CPU Core Am186™CC / CH / CU Overview General Purpose I/O 48 16-Bit Timers