SILICON SUBMOUNT Search Results

Contextual Info: TXPI 1065 Multi-mode Silicon PIN Detector With ST Style Submount DESCRIPTION FEATURES This is a high speed Silicon detector optimized for fiber optic applications requiring high Responsivity and a fast response time. ” High Responsivity ” High Electrical Bandwidth

MTC280LS-UV

Contextual Info: Ultraviolet LED Chip Product No: M T C280LS-UV Peak Emission Wavelength: 280nm The MTC280LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]

Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]

Contextual Info: Ultraviolet LED Chip Product No: M T C 265LS-U V Peak Emission Wavelength: 265nm The MTC265LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

Contextual Info: Ultraviolet LED Chip Product No: M T C 265SS -U V Peak Emission Wavelength: 265nm The MTC265SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

MTC325LS-UV

Contextual Info: Ultraviolet LED Chip Product No: M T C 325LS -UV Peak Emission Wavelength: 325 nm The MTC325LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

MTC340LS-UV

Contextual Info: Ultraviolet LED Chip Product No: M T C 340LS-UV Peak Emission Wavelength: 340 nm The MTC340LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

MTC325SS-UV

Contextual Info: Ultraviolet LED Chip Product No: M T C 325SS-UV Peak Emission Wavelength: 325 nm The MTC325SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

MTC310LS-UV

Abstract: UV LED 310 nm
Contextual Info: Ultraviolet LED Chip Product No: M T C 310LS -UV Peak Emission Wavelength: 310 nm The MTC310LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

MTC340SS-UV

Contextual Info: Ultraviolet LED Chip Product No: M T C 340SS-UV Peak Emission Wavelength: 340 nm The MTC340SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

MTC280SS-UV

Abstract: UV LED 280NM
Contextual Info: Ultraviolet LED Chip Product No: M T C 280SS-UV Peak Emission Wavelength: 280nm The MTC280SS-UV UV chip on low profile silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS

Photodiode cost sheet

Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC

photodiode demodulation

Abstract: gold metal detectors gold detectors circuit bond wire gold fiber optic detector fibre optic laser ceramic package PDB-C122
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA CL .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION

Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA C L .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION

SAE230VX

Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
Contextual Info: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity

PDB-C122

Contextual Info: Blue Enhanced Photoconductive Silicon Photodiode PDB-C122 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE .080 [2.03] .040 [1.02] .060 [1.52] .030 [0.76] CATHODE ANODE .020 [0.51] .015 [0.38] .008 [0.20] MAX ANODE CATHODE .050 [1.27]

Contextual Info: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value

cree

Abstract: DA3547
Contextual Info: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00-2 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value

DA2432

Abstract: cxxxd DA243 C470DA2432-0701-2
Contextual Info: Direct Attach DA2432 LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value

DA3547

Abstract: AuSn eutectic ausn submount
Contextual Info: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value

Contextual Info: Direct Attach DA2432 LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

hte 2642

Abstract: InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30641 C30665 C30619
Contextual Info: C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler Not yet available for C30665 Window Option: E: G: Silicon Glass (See below for availability)

MC2004

Abstract: MC2004-5DIEW MC2004-5DIE FALCON 250-1002 MC2045 photodetector pin 155mbps
Contextual Info: Microcosm ‘TZ’ Amplifier IC MC2004-5 Low-Cost Transimpedance Amplifier IC for Fiber Optic Applications at 155Mbps Main Features: General Description: q The MC2004-5 is a high performance linear transimpedance amplifier available in die form. It is designed to be mounted with a silicon or InGaAs