SILICON STORAGE TECHNOLOGY Search Results

39SF010

Abstract: 89c58 sst SSTFlashFlex51 schematic flash disk FLASHFLEX51 MAX232ACP processor 80486 89C58 Interfacing Flash Disk SST Serial Flash select
Contextual Info: User’s Manual Boot Strap Loader Demo Kit 2000 Silicon Storage Technology, Inc. 414-01 6/00 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashFlex, In-Application Programming, IAP and SoftLock are trademarks of Silicon Storage Technology, Inc. These specifications are subject to

Contextual Info: SFH501 SIEMENS SILICON DARLINGTON PHOTOTRANSISTOR FEATURES Maximum Ratings * Silicon Darlington Phototransistor in Epitaxial Planar Technology Operating and Storage Temperature Range T0P, Tgtq . -55°C to +100°C

SFH501-1

Abstract: SFH501 E605 SFH501-2
Contextual Info: SIEMENS SFH501 SILICON DARLINGTON PHOTOTRANSISTOR FEATURES Maximum Ratings • Silicon Darlington Phototransistor in Epitaxial Planar Technology • Basa Connection, Collector Terminal Electrically Connected to Case • High Reliability Operating and Storage Temperature

948F

Abstract: MC74VHC595 MC74VHC595D MC74VHC595DR2 MC74VHC595DT SOIC-16 TSSOP-16 VHC595 vhc 595
Contextual Info: MC74VHC595 8- Bit Shift Register with Output Storage Register 3- State The MC74VHC595 is an advanced high speed 8-bit shift register with an output storage register fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar

vhc 595

Abstract: VHC595 948F MC74VHC595 MC74VHC595D MC74VHC595DR2 MC74VHC595DT MC74VHC595DTEL MC74VHC595DTR2 MC74VHC595M
Contextual Info: MC74VHC595 8-Bit Shift Register with Output Storage Register 3-State The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar

vhc 595

Abstract: VHC595 MC74VHC595DTEL MC74VHC595DTR2 MC74VHC595M 948F MC74VHC595 MC74VHC595D MC74VHC595DR2 MC74VHC595DT
Contextual Info: MC74VHC595 8-Bit Shift Register with Output Storage Register 3-State The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar

948F

Abstract: MC74LVX595 MC74LVX595D MC74LVX595DR2 MC74LVX595DT MC74LVX595DTR2 MC74LVX595M MC74LVX595MEL
Contextual Info: MC74LVX595 Product Preview 8-Bit Shift Register with Output Storage Register 3-State The MC74LVX595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. The MC74LVX595 contains an 8–bit static shift register which

MC74VHCxxxD

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 - Bit Shift Register w ith Output Storage Register M C 74VH C 595 3 -S ta te The MC74VHC595 is an advanced high speed 8 -b it shift register with an output storage register fabricated with silicon gate CMOS technology.

plx 9054 fpga dma vhdl

Abstract: 8114RDK vhdl code for pci 9056 mpc 9700 plx vhdl code PCI9080-3 plx 9052 plx 9030 PCI 6140-AA33PC G PCI 9656 schematic
Contextual Info: PLX Technology The Leading Supplier of Standard I/O Interconnect Silicon PRODUCT GUIDE/LINECARD VERSION 2.0, 2004 PLX Technology, Inc. www.plxtech.com , is the leading supplier of standard I/O interconnect silicon to the communications, server, storage, embedded-control, and consumer industries.

Contextual Info: NEC fjPD42601 1,048,576 x 1-BIT SILICON FILE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The ¿/PD42601 silicon file is an economical mass storage device specifically designed to replace mag­ netic disk drives in silicon disk, solid-state recording,

Playstation 3 SERVICE MANUAL

Abstract: Playstation 2 SERVICE MANUAL SERVICE MANUAL Playstation 3 playstation 3 playstation 2 motherboard xbox xbox video playstation 3 service playstation 2 steelvine
Contextual Info: Automatic Drive Locking: Securing Digital Content Storage in the Digital Home January 2007 White Paper Silicon Image Table of Contents Table of Contents. 1

QUANTUM CAPACITIVE

Abstract: floating-gate 4156C flash "high temperature data retention" mechanism split-gate flash quantum dot
Contextual Info: Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells Yuri Tkachev and Alexander Kotov Silicon Storage Technology, Inc. Sunnyvale, USA e-mail: ytkachev@sst.com Abstract—A simple technique for monitoring floating gate

M25P08

Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Contextual Info: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010

MM74HC259

Contextual Info: Revised February 1999 MM74HC259 8-Bit Addressable Latch/3-to-8 Line Decoder General Description The MM74HC259 device utilizes advanced silicon-gate CMOS technology to implement an 8-bit addressable latch, designed for general purpose storage applications in digital

PCR606

Abstract: PCR406
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate ThyristorS TO-92 PCR 0.6 Silicon Planar pnpn Thyristor 1.CATHODE MAIN FEATURES 2.GATE Symbol Value IT RMS 0.6 PCR406 400 Tj PCR606 Junction Temperature 600 -40 ~ 125 Tstg Storage Temperature

OPC200TP

Abstract: Photosensor OPC200
Contextual Info: OPTEK Product Bulletin OPC200 July 1996 NPN Silicon Phototransistor Chip Type OPC200 Features Operating Tem perature. -40° C t o +85° C Storage Temperature. -65° C to +150° C

DSAH0050094.txt

Contextual Info: LOW JITTER PIN CONFIGURABLE LVDS OUTPUT ULTRA MINIATURE PURE SILICON SMD CLOCK OSCILLATORSILLATORS ASEMCLV ASEMCLV Pb RoHS Compliant 3.2 x 2.5 x 0.85 mm | | | | | | | | | | | | | | APPLICATIONS: FEATURES: • Consumer Electronics • Storage Area Networks

To92 thyristor

Abstract: Jiangsu Changjiang Electronics Technology Thyristor Itrms 120A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors PCR 0.6 A TO—92 Silicon Planar pnpn Thyristor FEATURES 1.CATHODE Current-IGT :120 A ITRMS : 2.GATE 0.6A 3.ANODE 1 2 3 VDRM : 400V Operating and storage junction temperature range

a115

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors PCR 0.6 A TO-92 Silicon Planar pnpn Thyristor 1. CATHODE FEATURES 2. GATE Current-IGT: 120 µA ITRMS: 0.6 A 3. ANODE 1 2 3 VDRM: 400 V Operating and storage junction temperature range

J20A

Abstract: MM54HCT323J MM74HCT323J
Contextual Info: PRELIMINARY Æ j Semiconductor MM54HCT323/MM74HCT323 8-bit TRI-STATE Universal Shift Register General Description This 8-bit TRI-STATE shift/storage register utilizes microCMOS technology, 3.0 micron silicon gate N-well CMOS. Along with the low power consumption and high noise im­

split-gate flash

Abstract: NAND read disturb markov sl 100 sem vlsi tech
Contextual Info: Charge-Gain Program Disturb Mechanism in Split-Gate Flash Memory Cell V. Markov, K. Korablev, A. Kotov, X. Liu, Y.B. Jia, T.N. Dang, and A. Levi Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 408-523-8506; fax: 408-736-4409; e-mail: vmarkov@sst.com

common cathode photodiode

Abstract: OPR5913 LARGE SURFACE AREA PHOTODIODE
Contextual Info: OPTEK Product Bulletin OPR5913 August 1996 Large Area SMD Silicon Photodiode Type OPR5913 Surface Mountable Large Active Area High Tem perature Operation Storage and Operating Te m pe ratu re . -55° C to +125° C

10G-EPON

Abstract: Low Jitter Configurable Dual LVDS Oscillator
Contextual Info: LOW JITTER PIN CONFIGURABLE DUAL LVDS OUTPUT ULTRA MINIATURE PURE SILICON TM CLOCK OSCILLATOR ASEMDLV Pb RoHS Moisture Sensitivity Level – MSL 1 Compliant APPLICATIONS: FEATURES: • Consumer Electronics • Storage Area Networks • SATA, SAS, Fibre Channel

xl1225 equivalent

Abstract: XL1225 TO-92 XL1225 XL1225 transistor "Plastic Encapsulate Transistors" PNPN XL1225 thyristor equivalent a115
Contextual Info: AVIC TECHNOLOGY CO.,LTD. TO-92 Plastic-Encapsulate Transistors XL1225 TO-92 Silicon Planar pnpn Thyristor 1. CATHODE FEATURES 2. GATE Current-IGT: 120 µA ITRMS: 0.6 A 3. ANODE 1 2 3 VDRM: 400 V Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃