SILICON REFERENCE DIODE Search Results
SILICON REFERENCE DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
SILICON REFERENCE DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: » F|b3ti?aSS D07ÛD13 E 6367255 MOTOROLA SC DIODES/OPTO 1N3016thru 1N3051 See Page 4-32 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3154,A thru 1N3157,A TEMPERATURE-COMPENSATED SILICON ZENER REFERENCE DIODES TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES |
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1N3016thru 1N3051 1N3154 1N3157 | |
optocoupler based isolated rms to dc converter
Abstract: CNY17F-3 FAN4803 FOD2711 KA1H0680 RC431A APPLICATION FAN4803
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FOD2711 FOD2711 RC431A FOD2711, optocoupler based isolated rms to dc converter CNY17F-3 FAN4803 KA1H0680 APPLICATION FAN4803 | |
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Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAL99 QUICK REFERENCE DATA PARAMETER |
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BAL99 Z690M BAW62 | |
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Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAL74 QUICK REFERENCE DATA SYMBOL |
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BAL74 | |
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Contextual Info: Philips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55 QUICK REFERENCE DATA SYMBOL |
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BAS55 7Z69086 BAW62 7Z73212 | |
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Contextual Info: P hilips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. November 1993 BAS678 QUICK REFERENCE DATA |
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BAS678 7Z69086 BAW62 | |
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Contextual Info: BAS19 BAS20 BAS21 tbS3^31 002M270 7bb • APX N A HER PHILIPS/DISCRETE b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a microminiature plastic envelope. They are intended for switching and general purposes. QUICK REFERENCE DATA |
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BAS19 BAS20 BAS21 002M270 bbS3R31 002427b | |
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Contextual Info: • 00EbflR4 47T N AUER PHILIPS/DISCRETE APX 1N4001G to 4007G b^E ]> JV SILICON DIFFUSED RECTIFIER DIODES A range of silicon rectifier diodes fo r general purpose use. QUICK REFERENCE D A T A 1N4001G Repetitive peak reverse voltage V Continuous reverse voltage |
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00EbflR4 1N4001G 4007G 1N4001G 4002G 4003G 4004G 4005G 4006G | |
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Contextual Info: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a m icrominiature plastic envelope. They are intended fo r switching and general purposes. Q UICK REFERENCE D A T A BAS 19 BAS20 BAS21 max. 100 150 200 V RRM |
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BAS19 BAS20 BAS21 100S2 OT-23, | |
temperature-compensated zenerContextual Info: ALLEGRO MI CROSYSTEMS I NC =13 » • 0S0M33Ô DGD3ÖQ1 S ■ T-91 01 ZENER DIODES Process ZHO, ZHP, ZHQ, ZHR Temperature-Compensated Zener Reference Diodes * * Anode • Silicon * Buried • Silicon ZHO and Cathode on Top Epitaxial Layer Construction for Low Series Resistance |
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0S0M33Ô temperature-compensated zener | |
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Contextual Info: • b b 53 tm □ □ 2b ac}7 13T APX N AMER PHILIPS/DISCRETE 1N 4001ID TO 1N 4007ID bTE D J V _ SILICON DIFFUSED RECTIRER DIODES This data sheet contains a range of silicon rectifier diodes for general purpose use. QUICK REFERENCE DATA |
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4001ID 4007ID 4002ID 4003ID 4004ID 4005ID 4006ID 1N4001ID N4001ID | |
GP 836 DIODE
Abstract: HP 3379 gp 728 diode marking 3507 diode marking 3fv DIODE 3FV 60 DIODE y 12 9p marking KDZ3.6FV 3fv 60
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KDZ36FV KDZ10FV KDZ11FV KDZ12FV KDZ13FV KDZ15FV KDZ16FV KDZ18FV KDV36VV GP 836 DIODE HP 3379 gp 728 diode marking 3507 diode marking 3fv DIODE 3FV 60 DIODE y 12 9p marking KDZ3.6FV 3fv 60 | |
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Contextual Info: t,bS3331 003533b b5T H A P X N AMER PHILIPS/DISCRETE PRLL4001 PRLL4002 b7E » y v SILICON DIFFUSED RECTIFIER DIODES A range o f silicon rectifier diodes fo r general use in leadless S M ID * envelopes. QUICK REFERENCE D A T A PRLL4002 PRLL4001 Repetitive peak reverse voltage |
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bS3331 003533b PRLL4001 PRLL4002 7Z95937 | |
marking D3 SOT26
Abstract: 1N4157 marking code D3 SOT26 1N4156 1N5179 CMXSTB200 CMXSTB300 CMXSTB400 320 MARKING CODE Marking Code D3
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CMXSTB200 CMXSTB300 CMXSTB400 CMXSTB200 OT-26 1N4156, 1N4157, 1N5179 CMXSTB200: marking D3 SOT26 1N4157 marking code D3 SOT26 1N4156 CMXSTB300 CMXSTB400 320 MARKING CODE Marking Code D3 | |
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c935
Abstract: zener diode marking code 30 zener diode code c935 data sheet CMXTC935A zener diode mv 5 zener diode ratings transistor C935 55c zener diode on semiconductor marking code sot
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CMXTC935A CMXTC935A OT-26 c935 zener diode marking code 30 zener diode code c935 data sheet zener diode mv 5 zener diode ratings transistor C935 55c zener diode on semiconductor marking code sot | |
2SD401
Abstract: Transistor 2sd401
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2SD401 O-220 500mA; 2SD401 Transistor 2sd401 | |
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Contextual Info: 02DZ100 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ100 Constant-Voltage Regulation Applications Reference Voltage Applications Unit: mm z Small package Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Power dissipation P* 200 mW |
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02DZ100 | |
TRANSISTOR 2SD1879
Abstract: 2SD1879 2SD187
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2SD1879 16KHz MA100mA TRANSISTOR 2SD1879 2SD1879 2SD187 | |
2SD1911
Abstract: 40af
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2SD1911 16KHz 2SD1911 40af | |
2SA1104Contextual Info: Silicon Epitaxial Planar Transistor 2SA1104 GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf |
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2SA1104 MT-100 2SA1104 | |
NPN Transistor VCEO 1000V
Abstract: transistor 2sC3552 2SC3552
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2SC3552 MT-100 NPN Transistor VCEO 1000V transistor 2sC3552 2SC3552 | |
npn 60v 3a to220
Abstract: 60V 3A diode 2SC3039 diode 60v 1a NPN Transistor 30A 400V
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2SC3039 O-220 npn 60v 3a to220 60V 3A diode 2SC3039 diode 60v 1a NPN Transistor 30A 400V | |
2SD1650Contextual Info: 2SD1650 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA |
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2SD1650 16KHz 100mA 2SD1650 | |
2sd1911Contextual Info: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA |
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2SD1911 16KHz 2sd1911 | |