SILICON RECTIFIER GQ Search Results

BYX42-300

Abstract: BYX42 BYX42-300R rectifier to4
Contextual Info: BYX42 SERIES PH I L I P S INTERNATIONAL 711DÖ5b D D m b S b SbE D GDI • P H I N T -01-/7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended fo r power rectifier applications. The series consists o f the following types:

BYX98

Abstract: BYX98-300R T-Oi-17 BYX98-300
Contextual Info: BYX98 SERIES T - O l- I T PHILIPS INTERNATIONAL IPHIN TllDÖEb GQMlfcibM T1S 5bE D RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX98-300to 1200.

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

PHS803

Abstract: rectifier 802 D8755 IEC134 PHS801 PHS802 PHS804 ultra fast pulse generator Philips FA 153
Contextual Info: N A UE R PHILIPS/DISCRETE ObE D • ^ 5 3 = 1 3 1 ' 00111=71 3 ■ PHS801 SERIES H t - 0 3 - I 9 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low

BY509

Abstract: diode BY509 GQ11G1S 7Z82239 T-03-09 T0309
Contextual Info: mz N AMER PHILIPS /DISCRETE QbE D u_ _ ^53^31 GQ11Q1S 4 • : B YO ua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E .H .T . rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m u lti­ pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

11E2

Abstract: 11E4 11E1
Contextual Info: SILICON RECTIFIER DIODE i a / ioo~ 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size v j/— ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7C027 0.5 .020) High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available DIA 2.7(.106)d i a

Contextual Info: Silicon Power Rectifier 20 Series Dim Millimeter Inches Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 -3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity. Stud Is Cathode Reverse Polarity: Stud is Anode A B C D E F 6 H J M N P 1 7437

Contextual Info: m M m m Chatsworth, CA ic m m s e m i P r o g r e s s P o w e re d b y T e ch no lo gy 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 1 Amp Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications

C701

Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
Contextual Info: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking

Contextual Info: 2bE D INTERNATIONAL RECTIFIER • 4fl5S4S2 GQ1071Q □ ■ International t o i Rectifier Inverter Type Thyristors 16 TO 80 AM PS R M S Part number 16RIF10W15 16RIF20W15 16RIF40W15 16RIF60W15 16RIF10W20 16RIF20W20 16RIF40W20 16RIF60W20 20RIF10W15 20RIF20W15

Contextual Info: isocon COnPONENTS LTD MSE D • MûôbSlO GQQQE34 =1 HIISO 'pz//-?5 H igh Speed, H igh G ain C ouple rs continued Propagation Delay Time Part Number 6N138 6N139 ICPL2730 ICPL2731 4N45 4N46 Current Typ*cal M IN < % I IN R Z I Features Specified Input Current

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

B857

Abstract: water flow sensor "water Flow Sensor" silicon rectifier gq b859 SKWD7000 U4T DIODE B-857
Contextual Info: S1E D • Û13bb71 G003fiTb Û4T m Z Z K G s e MIKRDN SEMIKRON INC V rsm/V If a v rrm V SKWD 7 0 0 0 /0 2 SKWD 7 0 0 0 /0 4 SKWD 7 0 0 0 /0 6 200 400 600 Symbol Voiw = 4 l/min ; Tw = 40 °C; ED = 100% Voiw = 8 l/min Ifsm Tvj Tvj Tvj Tvj = = = = 40 °C 180°C

U9024N

Abstract: BSS 250 IRFR P-Channel MOSFET
Contextual Info: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2

IEC60-2

Contextual Info: GENERAL EXPLANATORY NOTES RECTIFIER DIODES REVERSE RECOVERY When a semiconductor rectifier diode has been conducting in the forward direction sufficiently long to establish the steady state, there will be a charge due to minority carriers present. Before the device can

Contextual Info: T PD 9.1508A International IG R Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET Voss = 30V R o S (o n ) = 0 . 1 0 Q Description Fifth Generation H E X F E T s from international Rectifier

DD6120

Abstract: DD6120H DD6120S DD6120V DD6121 DD6123 DD6126
Contextual Info: ELEK LTD 2 5 j\ fil D 81C St.07G13 0000055 fl ~ 00055 ILUCB D _ _ DD6120 SERIES S IL IC O N D IF F U S E D J U N C T IO N P R E S S -F IT R E C T IF IE R S The D D 6 1 2 0 series are case rated, silicon diffused junction, medium current press-fit rectifiers. They conform to B S S O - 4 0 , J E D E C D O -21 and IE C A 6 outlines.

100v 3A silicon controlled rectifier

Abstract: da1002 DA1000 DA1001
Contextual Info: LUCAS S T A B I L I T Y ELEK LTD SfciQ?013 011_ J> UCAS 81C 00001 0G0Q001 ? « LU C B PRODUCTS D A1000 CONTROLLED AVALANCHE RECTIFIERS DA1001 6 0 -150V DA100Z PEAK REVERSE VOLTAGE The DA10 0 0 /1 /2 controlled avalanche rectifiers are silicon diffused junction

D10de

Abstract: IN4247 MIL-S-19500E IN5618 1N4245 1N4249 1N5618 1N5620 1N5622 1n4247 substitution
Contextual Info: MIL SPECS 44E J> • 0000155 0032^04 1 ■IIIILS INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by ^ 5 ^3 MIL-S-19500/286D SUPERSEDING MIL-S-19500/286C 6 March 1970 MILITARY SPECIFICATION

250-28UNF-2B

Abstract: 250-28UNF VV-I-530 1N5597 corona discharge circuit BIDDLE PDA FOR JANTX GRADE DEVICE ic 4046 1N5600 kvr 10 621
Contextual Info: MIL SP ECS 000 • 0000125 0031012 3 ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 February 1992 I 1NCH-POUNO MIL-S-19500/404B 15 November 1991 SUPERSEDING MIL-S-1950Q/404A 6 Apri I 1971

Contextual Info: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology

Contextual Info: PD 9.1437A International K 3R Rectifier IRF9540N PRELIMINARY H EXFET Pow er M O SFE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q ss = -1 0 0 V F b s o n = 0 . 1 1 7 Q