SILICON POWER RECTIFIER Search Results

Schottky diode TO220 15A 1000V

Abstract: "Dual Schottky Rectifier" Schottky diode TO220 NTE6088
Contextual Info: NTE6088 Silicon Dual Schottky Rectifier 60V, 30 Amp, TO220 Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency

MCR380

Contextual Info: MCR380 SERIES SILICON BEAM -FIRED INTEG RATED GATE SILICON CONTRO LLED RECTIFIERS BEAM-FIRED INTEG RATED GATE THYRISTO RS . . . designed fo r high power industrial and consumer applications in power and speed controls such as welders, furnaces, m otors, space

Common Anode Schottky Rectifier

Abstract: SCHOTTKY RECTIFIER 10 Amp CSHD10-45L
Contextual Info: CSHD10-45L SURFACE MOUNT SILICON POWER SCHOTTKY RECTIFIER 10 AMP, 45 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a Silicon Power Schottky Rectifier designed for surface mount power applications requiring a low forward

alternator rectifier diode 50a

Abstract: alternators NTE5827 alternator diode 50a NTE5826 NTE5829 NTE5828 press fit rectifiers
Contextual Info: NTE5826 thru NTE5829 Silicon Power Rectifier Diode, 50 Amp, Press Fit Description: The NTE5826 thru NTE5829 are silicon power rectifier diodes in a press−fit type package designed for use in all medium−current applications or for higher current industrial alternators and chassis

10 AMP 1200V RECTIFIER DIODE

Abstract: NTE5888 silicon power rectifier diodes NTE5884 NTE5885 silicon power rectifier NTE5864 NTE5865 NTE5889
Contextual Info: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp, DO4 Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for

General electric SCR C147M

Abstract: GE C147S High power SCR c147 scr C147N C147 GE C147P ge c147 C147A C147B
Contextual Info: High Power Silicon Controlled Rectifier 1200 Volts I C147 1 63A RMS The General Electric C l47 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused device which is considerably smaller in size than comparably rated high power SCR’s.

NTE125

Abstract: DO41
Contextual Info: NTE125 General Purpose Silicon Rectifier Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications. Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

MR1215SL

Abstract: MR1815SL MR1215FL MR1219FL MR1219SL MR1819SL
Contextual Info: MR1215FL, MR1219FL SILICON MR1815SL, MR1819SL UNIQUE, MULTI-CELL RECTIFIERS OFFERING HIGHEST ORDER OF RELIABILITY IN POWER APPLICATIONS HIGH-CURRENT SILICON RECTIFIERS 80/100 AMPERE 300, 600 VOLTS DIFFUSED JUNCTIONS Designers Data for "Worst Case" Conditions

SHDC624122

Abstract: SHDC624122D SHDC624122N SHDC624122P
Contextual Info: SENSITRON SEMICONDUCTOR SHDC624122 SHDC624122P SHDC624122N SHDC624122D TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4984, REV. – HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 40 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-258

NTE116

Contextual Info: NTE116 General Purpose Silicon Rectifier Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications. Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD674072B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3B HIGH PROFILE PACKAGE FEATURES:

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD674122 SHD674122B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4183, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

High power SCR

Abstract: C149 cycloconverter C149M10 C149C10 C149M20 C149E10 C149A10 C149A20 C149B10
Contextual Info: HIGH SPEED Silicon Controlled Rectifier 600 VOLTS I C 149 I I- — — -* 63A RMS The General Electric Cl 49 Silicon Controlled Rectifier is designed for power switching at high frequencies. This is an all-diffused device which is consider­ able smaller in size than comparably rated high power SCR’s.

C122F1G

Abstract: C122F1
Contextual Info: C122F1G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed.

silicon carbide

Abstract: silicon carbide RECTIFIER
Contextual Info: SENSITRON SEMICONDUCTOR SHD674072B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3B HIGH PROFILE PACKAGE FEATURES:

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD676112 SHD676112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4180, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-1 HIGH PROFILE PACKAGE

SHD674122

Abstract: SHD674122B
Contextual Info: SENSITRON SEMICONDUCTOR SHD674122 SHD674122B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4183, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE

Contextual Info: SENSITRON SEMICONDUCTOR SHD674112 SHD674112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATASHEET 4182, Rev. C HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES:

SHD674062

Abstract: SHD674062B
Contextual Info: SENSITRON SEMICONDUCTOR SHD674062 SHD674062B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4130, Rev. B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE

b1c DIODE schottky

Abstract: B1C ON SEMICONDUCTOR b1c diode SBRS81100T3G marking code B1C Diode SBRS81100 MBRS1100T3G marking code B19 Diode SBRS8190T3G diode b1c
Contextual Info: MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Preferred Devices Schottky Power Rectifier http://onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art

SHD676112

Abstract: SHD676112B
Contextual Info: SENSITRON SEMICONDUCTOR SHD676112 SHD676112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4180, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-1 HIGH PROFILE PACKAGE

SHD675112

Abstract: SHD675112B
Contextual Info: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

C701PB

Abstract: C701 c701 scr C701L dissipator C701PA C701PC C701PD C701PE C701PM
Contextual Info: High Power Silicon Controlled Rectifier C701 12 5 0 A A v g ., u p to 20 0 0 Volts "A AMPLIFYING GATE ^ Y 1^ The C701 Series o f high power SCR’s feature the newly developed multi­ diffusion technology using 53mm diameter silicon in a new, pressuremounted package for phase control.