SILICON POWER RECTIFIER Search Results

power rectifiers

Abstract: 250 Amp current 1500 volt diode do-9 inverter welder circuit J5C3 J6B3 J6D3 J6M3 J5M3 j5f3
Contextual Info: Edal SERIES J5, J6 Silicon Power Rectifiers Edal Series J silicon power rectifiers are ideal for a broad range of commercial and military uses including power supplies, ultrasonic systems, inverters, welders, emergency generators, battery chargers, DC motors and motion

Diode press-fit

Contextual Info: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with

e660

Contextual Info: BYZ 35A22 . BYZ 35K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 333 391 Silicon Press-fit diodes Silicon Protectifiers with

Schottky diode TO220 15A 1000V

Abstract: "Dual Schottky Rectifier" Schottky diode TO220 NTE6088
Contextual Info: NTE6088 Silicon Dual Schottky Rectifier 60V, 30 Amp, TO220 Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency

MCR380

Contextual Info: MCR380 SERIES SILICON BEAM -FIRED INTEG RATED GATE SILICON CONTRO LLED RECTIFIERS BEAM-FIRED INTEG RATED GATE THYRISTO RS . . . designed fo r high power industrial and consumer applications in power and speed controls such as welders, furnaces, m otors, space

Common Anode Schottky Rectifier

Abstract: SCHOTTKY RECTIFIER 10 Amp CSHD10-45L
Contextual Info: CSHD10-45L SURFACE MOUNT SILICON POWER SCHOTTKY RECTIFIER 10 AMP, 45 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a Silicon Power Schottky Rectifier designed for surface mount power applications requiring a low forward

alternator rectifier diode 50a

Abstract: alternators NTE5827 alternator diode 50a NTE5826 NTE5829 NTE5828 press fit rectifiers
Contextual Info: NTE5826 thru NTE5829 Silicon Power Rectifier Diode, 50 Amp, Press Fit Description: The NTE5826 thru NTE5829 are silicon power rectifier diodes in a press−fit type package designed for use in all medium−current applications or for higher current industrial alternators and chassis

10 AMP 1200V RECTIFIER DIODE

Abstract: NTE5888 silicon power rectifier diodes NTE5884 NTE5885 silicon power rectifier NTE5864 NTE5865 NTE5889
Contextual Info: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp, DO4 Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for

General electric SCR C147M

Abstract: GE C147S High power SCR c147 scr C147N C147 GE C147P ge c147 C147A C147B
Contextual Info: High Power Silicon Controlled Rectifier 1200 Volts I C147 1 63A RMS The General Electric C l47 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused device which is considerably smaller in size than comparably rated high power SCR’s.

C180NX500

Abstract: C180EX500 C180BX500 C180CX500 C180DX500 C180MX500 C180SX500 C180X500 C180AX
Contextual Info: High Power Silicon Controlled Rectifier 800 Volts 300ARMS I C180X500 AMPLIFYING GATE The General Electric C l 80X 500 Silicon Controlled Rectifier is specifically designed for low voltage phase control applications; e.g., welding, battery charging, plating supplies, etc. The SCR has very low power dissipation,

laser range finder schematics

Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Contextual Info: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals

MCR320-3

Abstract: MCR320-8 MCR320 MCR320-1 MCR320-4 RX-2-G MCR320-7
Contextual Info: MCR320 SERIES SILICON -O THYRISTORS K 7 A M P E R E S RM S 50-600 V O L T S SILICON CONTROLLED RECTIFIERS . . . designed prim arily for industrial applications. Ideally suited for capacitor-discharge ignition, systems, power switching and power con­ trol.

NTE125

Abstract: DO41
Contextual Info: NTE125 General Purpose Silicon Rectifier Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications. Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V

MCR154

Abstract: F-554 MCR155 MCR156 MCR157 2-20UNF-2A
Contextual Info: MCR154, MCR155 MCR156, MCR157 SILICON THYRISTO RS SILICON CONTRO LLED RECTIFIERS THYRISTO RS PNPN . . . designed fo r high frequency power switching applications such as inverters, choppers, transmitters, induction heaters, cycloconverters and high frequency lighting.

MR1215SL

Abstract: MR1815SL MR1215FL MR1219FL MR1219SL MR1819SL
Contextual Info: MR1215FL, MR1219FL SILICON MR1815SL, MR1819SL UNIQUE, MULTI-CELL RECTIFIERS OFFERING HIGHEST ORDER OF RELIABILITY IN POWER APPLICATIONS HIGH-CURRENT SILICON RECTIFIERS 80/100 AMPERE 300, 600 VOLTS DIFFUSED JUNCTIONS Designers Data for "Worst Case" Conditions

SHDC624122

Abstract: SHDC624122D SHDC624122N SHDC624122P
Contextual Info: SENSITRON SEMICONDUCTOR SHDC624122 SHDC624122P SHDC624122N SHDC624122D TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4984, REV. – HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 40 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-258

NTE116

Contextual Info: NTE116 General Purpose Silicon Rectifier Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications. Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Contextual Info: MSiCST02120 Available Silicon Carbide Schottky Power Rectifier 2A, 1200V DESCRIPTION These 1200V silicon carbide Schottky rectifiers are in a hermetically sealed package with internal metallurgical bonds. Its very fast switching capabilities provide greater efficiency at

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD674072B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3B HIGH PROFILE PACKAGE FEATURES:

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD674122 SHD674122B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4183, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

Contextual Info: MCR16N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.

High power SCR

Abstract: C149 cycloconverter C149M10 C149C10 C149M20 C149E10 C149A10 C149A20 C149B10
Contextual Info: HIGH SPEED Silicon Controlled Rectifier 600 VOLTS I C 149 I I- — — -* 63A RMS The General Electric Cl 49 Silicon Controlled Rectifier is designed for power switching at high frequencies. This is an all-diffused device which is consider­ able smaller in size than comparably rated high power SCR’s.

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD674112 SHD674112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATASHEET 4182, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: