SILICON GENERAL Search Results

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

Contextual Info: 1N1202RA Silicon Rectifier 4.98 Diodes Silicon Rectifiers General-Purpose American M. Page 1 of 1 Enter Your Part # Home Part Number: 1N1202RA Online Store 1N1202RA Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 1N4817 Silicon Rectifier 5.00 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N4817 Online Store 1N4817 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N253

Contextual Info: 1N253 Silicon Rectifier 9.87 Diodes Silicon Rectifiers General-Purpose American Micros. Page 1 of 1 Enter Your Part # Home Part Number: 1N253 Online Store 1N253 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N3981

Contextual Info: 1N3981 Silicon Rectifier 30.26 Diodes Silicon Rectifiers General-Purpose American Mic. Page 1 of 1 Enter Your Part # Home Part Number: 1N3981 Online Store 1N3981 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N1763

Contextual Info: 1N1763 Silicon Rectifier 17.71 Diodes Silicon Rectifiers General-Purpose American Mic. Page 1 of 1 Enter Your Part # Home Part Number: 1N1763 Online Store 1N1763 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N4142

Contextual Info: 1N4142 Silicon Rectifier 1.80 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N4142 Online Store 1N4142 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

md7002

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 : (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MD7002 (SILICON) MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed tor use as differential amplifier;, dual general-purpose

MPS3640

Contextual Info: MPS3640 SILICON PNP SILICON ANNULAR PNP SILICON SWITCHING TRANSISTOR TRANSISTOR . . . designed for general-purpose, low-level switching applications. • Low Collector-Em itter Saturation Voltage • • O u tp u t Capacitance — • Fast Switching Tim e @ I q = 50 mAdc

PHE13007

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

mje3055

Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
Contextual Info: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —

M8007

Abstract: M8006 MM800 MM8006 MM8007 K660
Contextual Info: MM8006 silicon MM8007 NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers in military and industrial equipment. Suitable for use in video wideband and general high-frequency amplifier applications

1SS53

Abstract: 1SS54 1SS55 SS53
Contextual Info: SEC SILICON DIODES ELECTRON DEVICE g g g g ^ S S 5 4 ,1 S S 5 5 ^ GENERAL PURPOSE SILICON EPITAXIAL PLANAR DIODES DESCR IPTIO N The 1SS53, 1SS54, and 1SS55 are silicon epitaxial planar diodes designed for general purpose applications. FEATURES PACKAGE D IM E N S IO N S

MJE2480

Abstract: TE 2482 2482 npn MJE2482 2482 H MJE2481 MJE2483 MJE24S0
Contextual Info: MJE2480, MJE2481 SILICON MJE2482, MJE2483 4.0 AM PERE NPN SILICON MEDIUM-POWER TRAN SISTO RS POWER TRANSISTO RS NPN SILICON . . . designed fo r use in general-purpose am plifier and switching applications. • Low C ollector-Em itter Saturation Voltage V cE(sat) = 0.7 V d c (Max) @ l c = 1.5 A d c

TIP132

Abstract: TIP131G TIP131 TIP132G TIP137 TIP137G
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

SILICON COMPLEMENTARY transistors darlington

Abstract: darlington complementary power amplifier TO-220 AYWW marking code IC DARLINGTON MANUAL tip131 schematic diagram 800 watt power amplifier TIP137G TIP131G TIP132
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general-purpose amplifier and low-speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

TIP31 NPN Transistor diagram

Abstract: darlington tip31 TIP31CG TIP32CG TIP31AG 6 pin to-220 power switching ic transistors TIP32 tip32a equivalent transistor tip31c TIP32 equivalent
Contextual Info: TIP31, TIP31A, TIP31B, TIP31C, NPN , TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

Contextual Info: 2N 5 3 6 8 through 2N 5375 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES I _ THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

BD241BFI

Abstract: BD242BFI
Contextual Info: BD241BFI BD242BFI COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241BFI is silicon epitaxial-base NPN

Contextual Info: BD777 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors designed for general purpose amplifier and high−speed switching applications. http://onsemi.com • High DC Current Gain • • •

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

2SA1046

Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS