SILICON GENERAL Search Results

Honeywell HSC

Abstract: Honeywell SSC Series ln 35 sensor Honeywell Silicon Pressure Sensor
Contextual Info: Installation Instructions for the TruStability HSC Series and SSC Series Silicon Pressure Sensors, Analog Output GENERAL INFORMATION TruStability High Accuracy Silicon Ceramic HSC Series and Standard Accuracy Silicon Ceramic (SSC) Series s are piezoresistive silicon pressure sensors offering a ratiometric

nichrome

Contextual Info: Hybrid Chip and HD! Components Nichrome on Silicon General Features EFI produces nichrome on silicon chip resistors similar in size and geometry to its tantalum nitride on silicon line. Nichrome resistors on silicon provide even better long term stability and tighter tolerance than

MPS8099

Abstract: MPS8599 IC 7410 transistor 2sc 973 AN-415 MPS8098 MPS8598
Contextual Info: MPS8098, MPS8099NPN MPS8598, MPS8599PNP SILICON COMPLEMENTARY SILICON ANNULAR AMPLIFIER TRANSISTORS COMPLEMENTARY SILICON AMPLIFIER TRANSISTORS . . . designed for general-purpose amplifier applications for audio circuits. • Collector Emitter Breakdown Voltage —

Contextual Info: Hybrid Chip and HDI Components Nichrome on Silicon General Features EFI produces nichrom e on silicon chip resistors similar in size and geometry to its tantalum nitride on silicon line. Nichrome resistors on silicon provide even better long term stability and tighter tolerance than

MD7002

Abstract: RB2K MD7002A MD7002B IB 6407 02k02
Contextual Info: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.

MD3762

Abstract: MD3762F MQ3762 rfl3
Contextual Info: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —

m0346

Abstract: BI 342 MD3467 MD3467F MQ3467
Contextual Info: MD3467 MD3467F MQ3467 SILICON MULTIPLE SILICON ANNULAR PNP SILICON TRANSISTORS M ULTIPLE . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation applications. • Collector-Emitter Breakdown Voltage —

md8003

Abstract: md8002 md8001 65407
Contextual Info: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap­ plications. •

MMCM2907

Abstract: MMCM3798 MMCM3799 MMCM3903 MMCM3904 MMT2907 MMT3798 MMT3903
Contextual Info: MMCM2907 SILICON MICRO-T PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . designed for general-purpose switching and am plifier applications, where high-density packaging is required. Space Saving Micro-Miniature Packages

m0325

Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

MM5006

Abstract: M5007 MM5007 MM3005 MM5005 MM3006 MM3007
Contextual Info: MM5005 SILICON MM5006 MM5007 PNP SILICON ANNULAR TRANSISTORS PNP SILICON AUDIO TRANSISTORS . . . designed for high-voltage audiodriver amplifierand general purpose switching and oscillator applications. High Collector-Emitter Breakdown Voltage — BVcEO * 100 Vdc (Min) @ lC = 10 mAdc (MM5007)

MM3904

Abstract: MM3903 2n3904 replacement 2N3903 2N3904
Contextual Info: MM3903 SILICON MM3904 NPN SILICON SWITCHING AND AMPLIFIER TRANSISTORS NPN SILICON ANNULAR TRANSISTORS . . , designed for general purpose switching and amplifier applications. Direct replacement for plastic 2N3903 and 2N3904. Hermetic Low Profile TO-52 Metal Package for High Reliability

MHQ2222

Abstract: MHQ2221 MPQ2222 2N2218 2N2222 MPQ2221 MP02222 2N2218 transistor NS 6 W 183 T KH 2222
Contextual Info: MHQ2221, MHQ2222 SILICON MPQ2221, MPQ2222 QUAD DUAL IN-LINE NPN SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON GENERAL-PURPOSE TRANSISTORS . . Designed for general-purpose switching circuits and D C to V H F amplifier applications.

MHQ2907

Abstract: MPQ2907 MHQ2906 A040 2N2906 2N2907 MPQ2906 MH02906
Contextual Info: MHQ2906, MHQ2907 SILICON MPQ2906, MPQ2907 QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose switching circuits and OC to V H F am plifier applications.

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

md7002

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 : (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MD7002 (SILICON) MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed tor use as differential amplifier;, dual general-purpose

phe13007

Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

MW front END

Abstract: MD3250 MD3250F MD3251 MD3251F MQ3251
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 M ULTIPLE SILICON AN N U LA R TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation

MD218

Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
Contextual Info: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap­

FMB-24M

Contextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded

MPN3401

Abstract: MPN3402
Contextual Info: MPN3401 silicon MPN3402 SILICON PIN SWITCHING DIODE SILICON PIN DIODE . . . designed primarily for VH F band switching applications but also suitable for use in general-purpose switching and attenuator circuits. Supplied in an inexpensive low-inductance plastic package for low

MPS3640

Contextual Info: MPS3640 SILICON PNP SILICON ANNULAR PNP SILICON SWITCHING TRANSISTOR TRANSISTOR . . . designed for general-purpose, low-level switching applications. • Low Collector-Em itter Saturation Voltage • • O u tp u t Capacitance — • Fast Switching Tim e @ I q = 50 mAdc

MD7000

Abstract: 335 j chip die npn transistor 46bsc
Contextual Info: MD7000 SILICON MULTIPLE SILICON ANNULAR TRANSISTOR NPN SILICON MULTIPLE TRANSISTOR . . . designed fo r use as differential amplifiers, dual general-purpose amplifiers, fro n t end detectors and tem perature compensation appli­ cations. • Low Collector-E m itter Saturation Voltage —