SILICON DIOXIDE Search Results

Contextual Info: Resistors Make Possible Wire Bondable Wire Capacitor Bondable Chip Chip Capacitor WBC Capacitor Series WBC Capacitor Series Nitride dielectric Silicon Dioxide/Silicon Capacitance range Nitride from 10pF to 1000pF • Silicon Dioxide/Silicon dielectric Silicon substrate

IC 8088

Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Contextual Info: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well

AT6021

Contextual Info: AT6021 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: The AT6021 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT6020

Contextual Info: AT6020 SILICON ABRUPT JUNCTION TUNING VARACTOR PACKAGE STYLE 15 DESCRIPTION: The AT6020 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

C0303

Abstract: C0505 C0202 C0404 C0606 capacitor 7900
Contextual Info: Wire Bondable Chip Capacitor WBC Capacitor Series • Silicon Dioxide/Silicon Nitride dielectric • Capacitance range from 10pF to 1000pF • Silicon substrate with gold or aluminum backing IRC’s wire-bondable chip capacitors are based on the successful

Contextual Info: TUNING VARACTORS 45-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1600 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 45 volt tuning diodes. A unique silicon dioxide passivation process assures

AT6019M

Contextual Info: AT6019M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The AT6019M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

Contextual Info: TUNING VARACTORS 60-VOLT SILICON TUNING VARACTORS DESCRIPTION 100 The GC1700 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures

AT6017-10

Contextual Info: AT6017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT9019-10

Contextual Info: AT9019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT6019-10

Contextual Info: AT6019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT9017-10

Contextual Info: AT9017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

Contextual Info: NC Series www.vishay.com Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

ct60

Abstract: symbol of varactor diode and equivalent circuit varactor diode notes "Tuning Varactor" varactor APPLICATION AT6021M JC500
Contextual Info: AT6021M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The ASI AT6021M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

Contextual Info: NC Series www.vishay.com Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

AT6022B-15

Abstract: CT60
Contextual Info: AT6022B-15 SILICON ABRUPT JUNCTION VARACTOR DESCRIPTION: The AT6022B-15 is a Silicon Abrupt Junction Varactor Designed for Octave Tuning of VHF Filters and Oscillators. PACKAGE STYLE DO-7 FEATURES INCLUDE: • Silicon Dioxide Passivation • γ = 0.5 • Hermetic DO-7 Package

transistor L44

Abstract: L44 TRANSISTOR MA4T645
Contextual Info: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified

Contextual Info: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Small size: 0.020 to 0.060 inches square • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS

Contextual Info: Thin Film Single-Value Chip and Wire Capacitors FEATURES • Die sizes: 0.020 x 0.020 to 0.060 x 0.060 • Capacitance values: 0.50 pF to 1000 pF • Tightest tolerance: 2.5% • Dielectrics: Silicon dioxide MOS or silicon dioxide/silicon nitride (MNOS),

Thin Film Capacitors

Contextual Info: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

ncd62

Contextual Info: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

IMPATT

Contextual Info: RA45200 Series Silicon Abrupt Junction runing Varactors Features 30 Description Fhe MA45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest Q ~ossible.Each- device in this series has a high density silicon dioxide passivation which results in exceptionally

NC-AA

Abstract: NCEE10
Contextual Info: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

Contextual Info: 90-VOLT SILICON TUNING VARACTORS DESCRIPTION 100 The GC1800 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 90 volt diodes. A unique silicon dioxide passivation process assures greater stability, reliability, and low leakage currents at