SILICON DIODE LOAD Search Results

1N4448

Abstract: LL4448
Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4448 These diode are delivered taped. Details see “Taping”.

1N4148

Abstract: LL4148
Contextual Info: LL4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4148 These diode are delivered taped. Details see “Taping”.

1N4448

Abstract: LL4448
Contextual Info: 1N4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in MiniMELF case with the type designation LL4448. DIM ENSIONS inches DIM Absolute Maximum Ratings Ta=25 mm Min. Max. Min. Max.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV20W Preliminary DIODE SILICON EPITAXIAL PLANAR DIODE 1 2 SOD-123  DESCRIPTION The UTC BAV20W is a silicon epitaxial planar diode. The UTC BAV20W is suitable for general purpose application.  1 2 FEATURES SOD-323 * Planar diode

1n4148

Abstract: 1N4148 silicon diodes thermal diode 1n4148 diode 1N4148 SEMTECH ELECTRONICS 1n4148 1n4148 mark JEDEC 1N4148 1N4148 diode DIODE 1N4148 characteristics diode 4148
Contextual Info: 1N4148 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxiai Planar Diode fast switching diode. max. 1.90 max. 1.90 This diode is also available in M iniM ELF case with the type designation LL4148. I r -Cathode - Cathode Mark M ark in W hite max. 0.520 max. 0.420

1N4448

Abstract: jy 1n4448 LL4448 MARK 1N p5001
Contextual Info: 1N 4448 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 This diode is also available in MiniMELF case with type desigantion LL4448. Cathode M ark max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 °C

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

1N4148

Abstract: LL4148
Contextual Info: 1N4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diodes fast switching diode. This diode is also available in MiniMELF case with the type designation LL4148. DIM ENSIONS inches DIM Absolute Maximum Ratings Ta=25 mm Min. Max. Min. Max.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXA Preliminary DIODE SURFACE MOUNT SILICON ZENER DIODE DESCRIPTION  1 The UTC UMMSZ52XXA is a surface mount silicon zener diode, it uses UTC’s advanced technology to provide customers with low reverse leakage current, etc.

ESJC01-12B

Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Contextual Info: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size

Contextual Info: J£II£LJ ^zml-Conducto'i \*S i/ i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N4148M SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max, 1.90 Cathode

characteristics of zener diode in reverse bias

Abstract: zener diode voltage drop and breakdown bidirectional zener Temperature Stabilizer diode about zener diode ZENER DIODE with Iz max Iz min zener diode constant current diodes bidirectional breakdown diodes
Contextual Info: SILICON ZENER DIODES Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it passes

b49 diode

Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Contextual Info: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

characteristics of zener diode in reverse bias

Abstract: fast zener diode stabiliser circuit diagram zu zener zener diode voltage drop and breakdown zener zu bidirectional zener diode Temperature Stabilizer diode
Contextual Info: VISHAY Vishay Semiconductors Silicon Zener Diodes Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load

CDSNC4148

Abstract: DIODE SMD 1206
Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load

NTE506

Contextual Info: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode in an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

Contextual Info: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

NTE2334

Abstract: ZENER DIODE 5v CAPACITY
Contextual Info: NTE2334 Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver,

DIIJ4

Abstract: UM 9515 IR 9515
Contextual Info: E S J C 0 7 9kV, 12kV I Outline Drawings k _ HIGH VOLTAGE SILICON DIODE E S JC 0 7 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features

LL4151

Contextual Info: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.