SILICON DIODE LOAD Search Results

1N4448

Abstract: LL4448
Contextual Info: LL4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4448 These diode are delivered taped. Details see “Taping”.

1N4148

Abstract: LL4148
Contextual Info: LL4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4148 These diode are delivered taped. Details see “Taping”.

1N4448

Abstract: LL4448
Contextual Info: 1N4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in MiniMELF case with the type designation LL4448. DIM ENSIONS inches DIM Absolute Maximum Ratings Ta=25 mm Min. Max. Min. Max.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV20W Preliminary DIODE SILICON EPITAXIAL PLANAR DIODE 1 2 SOD-123  DESCRIPTION The UTC BAV20W is a silicon epitaxial planar diode. The UTC BAV20W is suitable for general purpose application.  1 2 FEATURES SOD-323 * Planar diode

1n4148

Abstract: 1N4148 silicon diodes thermal diode 1n4148 diode 1N4148 SEMTECH ELECTRONICS 1n4148 1n4148 mark JEDEC 1N4148 1N4148 diode DIODE 1N4148 characteristics diode 4148
Contextual Info: 1N4148 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxiai Planar Diode fast switching diode. max. 1.90 max. 1.90 This diode is also available in M iniM ELF case with the type designation LL4148. I r -Cathode - Cathode Mark M ark in W hite max. 0.520 max. 0.420

1N4448

Abstract: jy 1n4448 LL4448 MARK 1N p5001
Contextual Info: 1N 4448 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 This diode is also available in MiniMELF case with type desigantion LL4448. Cathode M ark max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 °C

1N4148

Abstract: LL4148
Contextual Info: 1N4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diodes fast switching diode. This diode is also available in MiniMELF case with the type designation LL4148. DIM ENSIONS inches DIM Absolute Maximum Ratings Ta=25 mm Min. Max. Min. Max.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXA Preliminary DIODE SURFACE MOUNT SILICON ZENER DIODE DESCRIPTION  1 The UTC UMMSZ52XXA is a surface mount silicon zener diode, it uses UTC’s advanced technology to provide customers with low reverse leakage current, etc.

ESJC01-12B

Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Contextual Info: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size

Contextual Info: J£II£LJ ^zml-Conducto'i \*S i/ i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N4148M SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max, 1.90 Cathode

characteristics of zener diode in reverse bias

Abstract: zener diode voltage drop and breakdown bidirectional zener Temperature Stabilizer diode about zener diode ZENER DIODE with Iz max Iz min zener diode constant current diodes bidirectional breakdown diodes
Contextual Info: SILICON ZENER DIODES Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it passes

b49 diode

Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Contextual Info: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

characteristics of zener diode in reverse bias

Abstract: fast zener diode stabiliser circuit diagram zu zener zener diode voltage drop and breakdown zener zu bidirectional zener diode Temperature Stabilizer diode
Contextual Info: VISHAY Vishay Semiconductors Silicon Zener Diodes Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it

NTE506

Contextual Info: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode in an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

NTE2334

Abstract: ZENER DIODE 5v CAPACITY
Contextual Info: NTE2334 Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver,

DIIJ4

Abstract: UM 9515 IR 9515
Contextual Info: E S J C 0 7 9kV, 12kV I Outline Drawings k _ HIGH VOLTAGE SILICON DIODE E S JC 0 7 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features

LL4151

Contextual Info: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.

esjc

Abstract: diode SM N6040 esjc03-09
Contextual Info: E S J C 0 3 9 kv S ± 'J M fl^tSSs : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC 03», ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

NEC 2101

Abstract: 1SS304 marking A6
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.

BC237

Abstract: marking code N9 8-pin
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90

BC237

Abstract: 2n2222a SOT223 5161 common anode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for

ESJC07-09B

Abstract: GGT DIODE ESJC07 ESJC07-12B
Contextual Info: ESJC07 9kV, 12kV : O u tlin e D ra w in g s F HIGH VOLTAGE SILICON DIODE E S J C 07& , ESJC 07 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.