SILICON DIODE 3A Search Results

Contextual Info: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode

1N4148

Abstract: 1N4148 SIGNAL DIODE LL4148 dynamic resistance LL4148 FAST MELF LL4148
Contextual Info: CE 1N4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-Melf case with the type designation LL4148 MECHANICAL DATA . Case: DO-35 glass case

1N4448

Abstract: LL4448
Contextual Info: CE 1N4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4448 MECHANICAL DATA . Case: MinMelf glass case SOD- 80

Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

mch3412

Abstract: ta3173 DIODE MARKING 3173 TA-317
Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)

MCH5702

Abstract: MCH6201 SBS006
Contextual Info: Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating

melf diode marking

Contextual Info: TMBYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

Contextual Info: 3A Avg. 200Volts 30GFA20 Fast Recovery Diode DSE-13048（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 7 Construction :Diffusion-type Silicon Diode，Axial Lead Type

Contextual Info: 3A Avg. 600Volts 31DF6 Fast Recovery Diode DSE-13050（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 6 Construction :Diffusion-type Silicon Diode，Axial Lead Type

Contextual Info: 3A Avg. 400Volts 30GFA40 Fast Recovery Diode DSE-13049（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 7 Construction :Diffusion-type Silicon Diode，Axial Lead Type

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Contextual Info: TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V -H TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Built-in a schottky barrier diode

Contextual Info: RD0306T Ordering number : ENA1573 SANYO Semiconductors DATA SHEET RD0306T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . Fast reverse recovery time. Low noise at the time of reverse recovery.

G marking sbd

Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS VEC2822
Contextual Info: VEC2822 Ordering number : ENA0961 SANYO Semiconductors DATA SHEET VEC2822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

Contextual Info: EMH2801 Ordering number : ENA1821A SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

TPC8A01

Abstract: MARKING 3AB
Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •

MCH6101

Abstract: MCH6702 SBS006 TA-3025
Contextual Info: Ordering number : ENN6684A MCH6702 PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode MCH6702 DC/DC Converter Applications unit : mm 2191A 0.25 [MCH6702] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 • Composite type with a PNP transistor and a Schottky barrier diode contained in one

smd diode marking 2J

Abstract: 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

diode sy 710

Abstract: VEC2814
Contextual Info: VEC2814 Ordering number : ENA0390B SANYO Semiconductors DATA SHEET VEC2814 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

DBA30

Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Contextual Info: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A

3H DIODE smd

Abstract: 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

zener smd marking 2x

Abstract: 3H DIODE smd smd diode marking 2J smd 27 3e diode sod323 diode marking code 2E 1Z 116 MM3Z10 MM3Z11 MM3Z12 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

BU506D

Contextual Info: Inchange Semiconductor Product Specification BU506D Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching speed ・With integrated efficiency diode APPLICATIONS ・Horizontal deflection circuits of colour TV receivers.

2SD1948

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD1948 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. LAMP, SOLENOID DRIVE APPLICATIONS. 10.3MAX . High DC Current Gain : hFE= 500~1500 Ic=lA . Low Collector Saturation Voltage : VCE(sat)=0.3V(Max.) (Ic=3A) . Zener Diode Included Between Collector and Base

2SD2634

Contextual Info: SavantIC Semiconductor Product Specification 2SD2634 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING