SILICON DIFFUSED POWER TRANSISTOR Search Results
SILICON DIFFUSED POWER TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
|
BLA1011-300 - 300W LDMOS Avionics Power Transistor |
|
||
| 54F151LM/B |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
|
||
| ICL7667MJA |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
|
||
| 93L422ADM/B |
|
93L422A - 256 x 4 TTL SRAM |
|
||
| 54F151/BEA |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
|
SILICON DIFFUSED POWER TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BUW13AW
Abstract: BUW13W
|
Original |
BUW13W; BUW13AW OT429 MBB008 MBK117 OT429) SCA55 137067/00/01/pp12 BUW13AW BUW13W | |
BUW11AW
Abstract: BUW11W
|
Original |
BUW11W; BUW11AW OT429 MBB008 MBK117 OT429) SCA55 137067/00/01/pp12 BUW11AW BUW11W | |
phe13007Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high |
Original |
PHE13007 PHE13007 O220AB | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high |
Original |
PHE13009 PHE13009 O220AB | |
BU4508AF
Abstract: transistor BU4508AF
|
Original |
BU4508AF SCA60 135104/150/03/pp12 BU4508AF transistor BU4508AF | |
"Power Transistors"
Abstract: B/W TELEVISION circuit Q 817 BU505F power transistors BU505DF transistors handbook
|
Original |
BU505F; BU505DF OT186 BU505DF MBB008 MBB077 BU505F. BU505DF. "Power Transistors" B/W TELEVISION circuit Q 817 BU505F power transistors transistors handbook | |
BUW84
Abstract: philips power transistor bd139 MGE253 BD139 BUW85 MGB904
|
Original |
BUW84; BUW85 MBB008 MBK107 SCA55 137067/00/01/pp12 BUW84 philips power transistor bd139 MGE253 BD139 BUW85 MGB904 | |
BUW12AF
Abstract: BUW12F
|
Original |
BUW12F; BUW12AF OT199 MBB008 MSB012 SCA55 137067/00/01/pp12 BUW12AF BUW12F | |
BU505 equivalent
Abstract: Q 817 BU505D BU505
|
Original |
BU505; BU505D O-220AB BU505D MBB008 MBB077 MBK106 BU505. BU505 equivalent Q 817 BU505 | |
but11Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors |
Original |
BUT11; BUT11A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 but11 | |
BU505D
Abstract: BU505
|
Original |
BU505; BU505D O-220AB BU505D MBB008 MBB077 MBK106 BU505. BU505 | |
BUT12AF equivalent
Abstract: BUT12 BUT12A BUT12AF BUT12F
|
Original |
BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12AF equivalent BUT12 BUT12A BUT12AF BUT12F | |
BUT12AF equivalent
Abstract: transistor but12af BUT12F BUT12AF BUT12 dk 57
|
Original |
BUT12F; BUT12AF OT186 MBB008 MBK109 SCA55 137067/00/01/pp11 BUT12AF equivalent transistor but12af BUT12F BUT12AF BUT12 dk 57 | |
BUW13AF
Abstract: BUW13F
|
Original |
BUW13F; BUW13AF OT199 MBB008 MSB012 SCA55 137067/00/01/pp16 BUW13AF BUW13F | |
|
|
|||
BUW12A
Abstract: BUW12AW BUW12W MGB927
|
Original |
BUW12W; BUW12AW OT429 MBB008 MBK117 OT429) SCA55 137067/00/01/pp12 BUW12A BUW12AW BUW12W MGB927 | |
BU505F
Abstract: BU505DF
|
Original |
BU505F; BU505DF OT186 BU505DF MBB008 MBB077 BU505F. BU505DF. BU505F | |
BU506
Abstract: BU506D MGB874
|
Original |
BU506; BU506D O-220AB BU506D MBB008 MBB077 MBK106 BU506. BU506 MGB874 | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for |
Original |
BUJ303B O220AB | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
Original |
BUJ105A O220AB | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount |
Original |
BUJ105AB OT404 | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
Original |
BUJ106A O220AB | |
BUJ103AX
Abstract: BP317 BU1706AX
|
Original |
BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX | |
BP317
Abstract: BU1706AX BUJ204AX
|
Original |
BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
Original |
BUJ103A O220AB SCA60 135104/240/02/pp12 | |