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    BUZ211

    Abstract: UZ210 kds 210
    Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C


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    o-20467078-a1102-a2c67078-a1100-a2210/b+4sil02771buz211uz210kds 210 PDF