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SIHS20 Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHS20N50C-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 20A TO-247AD	Original	PDF		7

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Vishay Intertechnologies


Vishay Intertechnologies SIHS20N50C-E3 - Rail/Tube (Alt: SIHS20N50C-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHS20N50C-E3	Tube			480	1 - 10 - 100 - 1000 $4.76 10000 $4.69	Buy Now
Mouser Electronics	SIHS20N50C-E3					1 - 10 - 100 - 1000 $4.53 10000 $4.53	Get Quote

SIHS20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SIHS20N50C Abstract: N-channel MOSFET to-247 mosfet 1208 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 20 A, 500 V, RDS on max . = 270 mW at VGS = 10 V I INNOVAT AND TEC O L OGY SiHS20N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Cell Technology in Super TO-247 Package	Original	sihs20n50c-e3 o-247 sihs20n50c s11-0112-rev +431-jan-11 vmn-pt0260-1208 n-channel mosfet to-247 mosfet 1208	PDF
SiHS20N50C Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	sihs20n50c 2002/95/ec o-247ac sihs20n50c-e3 +118-jul-08	PDF
AN609 Contextual Info: SiHS20N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihs20n50c an609 2104m 5542m +22439m 0813m	PDF
Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	sihs20n50c 2002/95/ec super-247 sihs20n50c-e3 +22011/65/eu js709a	PDF
SiHS20N50C Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	sihs20n50c 2002/95/ec super-247 sihs20n50c-e3 +111-mar-11	PDF
Contextual Info: SiHS20N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihs20n50c an609 7648m 0088m +64242m 8022m 2104m 5542m 2439m 0813m	PDF
SiHS20N50C Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	sihs20n50c 2002/95/ec super-247 sihs20n50c-e3 +22011/65/eu 12-mar-12	PDF
Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	sihs20n50c 2002/95/ec super-247 sihs20n50c-e3 +22011/65/eu 12-mar-12	PDF
diode s11 Abstract: SiHS20N50C Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	sihs20n50c 2002/95/ec super-247 sihs20n50c-e3 +218-jul-08 diode s11	PDF
SiHx8N50D Abstract: SiHx8N50C switching transformer atx Contextual Info: VISHAY SILICONIX www.vishay.com MOSFETs Application Note Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide by Philip Zuk and Sanjay Havanur The two-switch forward converter is a widely used topology and considered to be one of the most reliable converters ever. Its	Original	q2/2014 sihx7n60e sihx6n65e 14-jan-14 +3sihx8n50d sihx8n50c switching transformer atx	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETS N-Channel Planar FET Gen. 6.4 Cell Technology in Super TO-247 Package KEY BENEFITS • 20 A, 500 V, RDS on max. = 270 mW at VGS = 10 V • Improved gate charge: Qg max. = 76 nC • Low FOM: RDS(on) x Qg = 20.52 WnC	Original	sihs20 o-247 2002/95/ec sihs20n50c-e3 +2sihs20n50c vmn-pt0260-1102	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF