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SIHP22N6 Datasheets (9)

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Vishay Siliconix

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHP22N60AE-BE3	Vishay Siliconix	N-CHANNEL 600V	Original	PDF	133.18KB	7
SIHP22N60AE-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO220AB	Original	PDF	135.03KB
SIHP22N60AEL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V	Original	PDF	130KB
SIHP22N60E-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB	Original	PDF		8
SIHP22N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 19A TO220AB	Original	PDF	276.45KB
SIHP22N60E-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB	Original	PDF		8
SIHP22N60EL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO220AB	Original	PDF	144.46KB
SIHP22N60S-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO220	Original	PDF		8
SIHP22N65E-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-220AB	Original	PDF	296.11KB

SIHP22N6 Price and Stock

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Vishay Intertechnologies


Vishay Intertechnologies SIHP22N60E-GE3 Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHP22N60E-GE3		141		1	1 $4.42 10 $3.11 100 $2.93 1000 $2.93 10000 $2.93	Buy Now
Verical	SIHP22N60E-GE3		141		18	1 - 10 - 100 $4.43 1000 $4.43 10000 $4.43	Buy Now
Avnet Americas	SIHP22N60E-GE3	Tape & Reel		31 Weeks	1,000	1 - 10 - 100 - 1000 $1.81 10000 $1.75	Buy Now
Mouser Electronics	SIHP22N60E-GE3		666			1 $5.58 10 $3.02 100 $2.52 1000 $2.11 10000 $2.11	Buy Now
Newark	SIHP22N60E-GE3	Bulk	658		1	1 $5.91 10 $3.13 100 $2.61 1000 $2.35 10000 $2.35	Buy Now

TTI	SIHP22N60E-GE3	Tube	3,000		50	1 - 10 - 100 $2.48 1000 $2.13 10000 $2.13	Buy Now
Chip 1 Exchange	SIHP22N60E-GE3		32,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SIHP22N60E-GE3			33 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIHP22N60E-GE3		2,350	39 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHP22N60AE-GE3 Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHP22N60AE-GE3				1	1 $4.31 10 $3.88 100 $3.09 1000 $2.87 10000 $2.87	Get Quote
Avnet Americas	SIHP22N60AE-GE3	Tape & Reel		31 Weeks	1,000	1 - 10 - 100 - 1000 $2.04 10000 $2.00	Buy Now
Mouser Electronics	SIHP22N60AE-GE3					1 - 10 - 100 - 1000 $2.08 10000 $2.08	Get Quote
Vishay Intertechnologies SIHP22N60EF-GE3 Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHP22N60EF-GE3				1	1 $4.39 10 $3.15 100 $2.38 1000 $2.38 10000 $2.38	Get Quote
Avnet Americas	SIHP22N60EF-GE3	Tape & Reel		35 Weeks	1,000	1 - 10 - 100 - 1000 $1.79 10000 $1.61	Buy Now
Mouser Electronics	SIHP22N60EF-GE3		1,560			1 $4.92 10 $2.89 100 $2.35 1000 $1.82 10000 $1.82	Buy Now
Newark	SIHP22N60EF-GE3	Bulk			1	1 $5.06 10 $3.34 100 $2.36 1000 $1.95 10000 $1.95	Buy Now
TTI	SIHP22N60EF-GE3	Reel			1,000	1 - 10 - 100 - 1000 $1.76 10000 $1.76	Buy Now
Vishay Intertechnologies SIHP22N60E-E3 Transistor: N-MOSFET; unipolar; 600V; 21A; 227W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHP22N60E-E3				1,000	1 - 10 - 100 - 1000 $2.48 10000 $2.48	Get Quote
Avnet Americas	SIHP22N60E-E3	Tube		31 Weeks	1,000	1 - 10 - 100 - 1000 $1.81 10000 $1.75	Buy Now
Mouser Electronics	SIHP22N60E-E3		2,140			1 $5.31 10 $2.76 100 $2.51 1000 $2.11 10000 $2.11	Buy Now
TTI	SIHP22N60E-E3	Tube			1,000	1 - 10 - 100 - 1000 $2.08 10000 $2.08	Buy Now
EBV Elektronik	SIHP22N60E-E3			39 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHP22N65E-GE3 Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 56A; 227W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHP22N65E-GE3				1	1 $4.50 10 $4.05 100 $3.22 1000 $3.00 10000 $3.00	Get Quote
Avnet Americas	SIHP22N65E-GE3	Tape & Reel		31 Weeks	1,000	1 - 10 - 100 - 1000 $2.08 10000 $2.00	Buy Now
Mouser Electronics	SIHP22N65E-GE3		951			1 $6.26 10 $4.10 100 $3.02 1000 $2.41 10000 $2.41	Buy Now
Bristol Electronics	SIHP22N65E-GE3		1,000		1	1 $3.76 10 $2.45 100 $1.77 1000 $1.62 10000 $1.62	Buy Now
Quest Components ()	SIHP22N65E-GE3		800			1 $4.95 10 $4.95 100 $2.31 1000 $2.15 10000 $2.15	Buy Now
	SIHP22N65E-GE3		800			1 $5.06 10 $5.06 100 $5.06 1000 $2.53 10000 $2.53	Buy Now

EBV Elektronik	SIHP22N65E-GE3			39 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SIHP22N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sihp22n6 Abstract: SiHP22N60E-GE3 Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n60e o-220ab 2011/65/eu 2002/95/ec +312-mar-12 sihp22n6 sihp22n60e-ge3	PDF
Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	sihp22n60s o-220 2002/95/ec sihp22n60s-e3 +118-jul-08	PDF
SiHP22N60S-E3 Abstract: SiHP22N60S Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	sihp22n60s o-220 2002/95/ec sihp22n60s-e3 +118-jul-08	PDF
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n60e o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
SIHP22N60E Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two	Original	sihp22n60e 2002/95/ec o-220ab 11-mar-11	PDF
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low figure-of-merit (FOM) Ron x Qg	Original	sihp22n60e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n60e 2002/95/ec o-220ab 11-mar-11	PDF
Contextual Info: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n65e o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n65e o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sihp22n60e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) () VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron	Original	sihp22n60s 2002/95/ec o-220ab sihp22n60s-e3 +111-mar-11	PDF
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n60e o-220ab 2011/65/eu 2002/95/ec +112-mar-12	PDF
TO-220aB 11A Contextual Info: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested	Original	sihp22n60s 2002/95/ec o-220ab 11-mar-11 +1to-220ab 11a	PDF
SIHP22N60S Abstract: SiHP22N60S-E3 TO-220aB DIODE 11A Contextual Info: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	sihp22n60s o-220ab 2002/95/ec sihp22n60s-e3 +218-jul-08 to-220ab diode 11a	PDF

Contextual Info: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested	Original	sihp22n60s 2002/95/ec o-220ab 2011/65/eu +112-mar-12	PDF
Contextual Info: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are	Original	sihp22n65e o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHP22N60S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sihp22n60s an609 8329m 5274m +24375m 23-aug-11	PDF
Contextual Info: SiHP22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihp22n65e an609 7570u 6281m +36682m 0914u 23-jul-14	PDF
Contextual Info: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested	Original	sihp22n60s 2002/95/ec o-220ab 2011/65/eu +2js709a 02-oct-12	PDF
SIHP22N60S-E3 Abstract: max6265 siliconix mosfet marking to-220 Contextual Info: Preliminary SiHP22N60S, SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.19 Qg (Max.) (nC) 96 • 100 % Avalanche tested Qgs (nC) 17	Original	sihp22n60s sihf22n60s o-220 sihp22n60s-e3 +4sihf22n60s-e3 18-jul-08 max6265 siliconix mosfet marking to-220	PDF
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihp22n60e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiHP22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihp22n60el an609 7589u 6282m +36682m 0918u 03-nov-14	PDF
Contextual Info: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)	Original	sihp22n60s o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHP22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg	Original	sihp22n60el 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF

SIHP22N6 Search Results

SIHP22N6 Datasheets (9)

SIHP22N6 Price and Stock

Vishay Intertechnologies SIHP22N60E-GE3

Vishay Intertechnologies SIHP22N60AE-GE3

Vishay Intertechnologies SIHP22N60EF-GE3

Vishay Intertechnologies SIHP22N60E-E3

Vishay Intertechnologies SIHP22N65E-GE3

SIHP22N6 Datasheets Context Search

sihp22n6

SiHP22N60S-E3

SIHP22N60E

TO-220aB 11A

SIHP22N60S

SIHP22N60S-E3