SIHG47N Search Results

SiHG47N60S

Abstract: ktp12
Contextual Info: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 • 100 % Avalanche Tested RoHS 216 • Ultra Low Gate Charge COMPLIANT Qgs (nC) 39 • Ultra Low Ron Qgd (nC) 57 • Compliant to RoHS Directive 2002/95/EC

C180-24

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SiHG47N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

4810 mosfet

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses

pfc power supply

Contextual Info: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses

sihg47n60ef

Contextual Info: SiHG47N60EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)

Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses

Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)

Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses

SiHG47N60S

Abstract: TRANSFORMER 220 to 14V ktp12 SIHG47N60S-E3
Contextual Info: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package

Contextual Info: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses

Contextual Info: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfets O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses

4810 mosfet

Abstract: SIHG47N60E
Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses

Contextual Info: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested

Contextual Info: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss)

Contextual Info: 2014 Super 12 Products SiHG47N60E / E Series High-Voltage MOSFETs SiHG47N60E / E Series Low Conduction and Switching Losses for Use in a Wide Range of Products • • Features • High performance – Low RDS ON , QSW and COSS for high efficiency › Low FOM (low RDS(ON) x Qg)

sihg47n60

Contextual Info: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses

sihg47n60s-e3

Abstract: SIHG47N60S
Contextual Info: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package

Contextual Info: SiHG47N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

AN609

Abstract: SiHG47N60S
Contextual Info: SiHG47N60S_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter