SIHG28N65E Search Results
SIHG28N65E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIHG28N65EF-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 28A TO-247AC | Original | 147.22KB |
SIHG28N65E Price and Stock
Vishay Siliconix SIHG28N65EF-GE3MOSFET N-CH 650V 28A TO247AC |
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SIHG28N65EF-GE3 | Tube | 500 |
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SIHG28N65EF-GE3 | 1,000 | 1 |
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SIHG28N65EF-GE3 | 800 |
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Vishay Intertechnologies SIHG28N65EF-GE3N-CHANNEL 650V - Bulk (Alt: SIHG28N65EF-GE3) |
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SIHG28N65EF-GE3 | Bulk | 22 Weeks | 500 |
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SIHG28N65EF-GE3 | 440 |
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SIHG28N65EF-GE3 | 23 Weeks | 25 |
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Vishay Intertechnologies SIHG28N65E-GE3MOSFETs N-CHANNEL 650V |
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SIHG28N65E-GE3 |
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Vishay Intertechnologies SIHG28N65EF-GE3 (E SERIES)Mosfet, N-Ch, 650V, 28A, To-247Ac Rohs Compliant: Yes |Vishay SIHG28N65EF-GE3 |
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SIHG28N65EF-GE3 (E SERIES) | Cut Tape | 50 | 1 |
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SIHG28N65E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC) |
Original |
SiHG28N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG28N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHG28N65E AN609, 7113m 5283m 0346m 9810u 28-Nov-14 | |
Contextual Info: SiHG28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC) 37 |
Original |
SiHG28N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |