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SIHG25N50E Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHG25N50E-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-247AC	Original	PDF	185.41KB

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Vishay Intertechnologies


Vishay Intertechnologies SIHG25N50E-GE3 MOSFET N-CH 500V 26A TO247AC
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DigiKey	SIHG25N50E-GE3	Tube	728		1	1 $4.80 10 $4.80 100 $2.26 1000 $1.74 10000 $1.73	Buy Now
Avnet Americas	SIHG25N50E-GE3	Bulk		18 Weeks	500	1 - 10 - 100 - 1000 $1.87 10000 $1.73	Buy Now
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TTI	SIHG25N50E-GE3	Reel	1,000		500	1 - 10 - 100 - 1000 $1.76 10000 $1.73	Buy Now
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Avnet Asia	SIHG25N50E-GE3			22 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIHG25N50E-GE3			19 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHG25N50E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	SiHG25N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	SiHG25N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and	Original	SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E	PDF