SIHG25N50E Search Results

SIHG25N50E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHG25N50E-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-247AC	Original	PDF	185.41KB

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Vishay Siliconix SIHG25N50E-GE3 MOSFET N-CH 500V 26A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG25N50E-GE3	Tube	925		1	1 $4.26 10 $4.26 100 $2.26 1000 $1.74 10000 $1.73	Buy Now
Vishay Intertechnologies SIHG25N50E-GE3 N-CHANNEL 500V - Bulk (Alt: SIHG25N50E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG25N50E-GE3	Bulk		22 Weeks	500	1 - 10 - 100 - 1000 $1.87 10000 $1.73	Buy Now
Mouser Electronics	SIHG25N50E-GE3		1,295			1 $4.18 10 $2.56 100 $2.26 1000 $1.80 10000 $1.73	Buy Now
TTI	SIHG25N50E-GE3	Reel			500	1 - 10 - 100 - 1000 $1.75 10000 $1.71	Buy Now
TME	SIHG25N50E-GE3				1	1 $3.85 10 $3.04 100 $2.36 1000 $2.36 10000 $2.36	Get Quote
Avnet Asia	SIHG25N50E-GE3			22 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip Stock	SIHG25N50E-GE3		891			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIHG25N50E-GE3			23 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHG25N50E-GE3 (E SERIES) Mosfet, N-Ch, 500V, 26A, To-247Ac Rohs Compliant: Yes \|Vishay SIHG25N50E-GE3
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Newark	SIHG25N50E-GE3 (E SERIES)	Bulk	400		1	1 $5.72 10 $3.67 100 $3.18 1000 $2.65 10000 $2.65	Buy Now
Vishay Intertechnologies SIHG25N50EGE E SERIES POWER MOSFET Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHG25N50EGE		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHG25N50E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	SiHG25N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	SiHG25N50E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and	Original	SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E	PDF