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    SIHG23N60E Search Results

    SIHG23N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHG23N60E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23A TO247AC Original PDF 193.97KB
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    SIHG23N60E Price and Stock

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    Vishay Siliconix SIHG23N60E-GE3

    MOSFET N-CH 600V 23A TO247AC
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    Vishay Intertechnologies SIHG23N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHG23N60E-GE3)
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    Mouser Electronics SIHG23N60E-GE3 731
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    TTI SIHG23N60E-GE3 Tube 2,500 50
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    SIHG23N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS


    Original
    SiHG23N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS


    Original
    SiHG23N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiHG23N60E AN609, 0914u 6390m 6702m 1736u 26-Jun14 PDF