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    SIHFPF50 Search Results

    SIHFPF50 Datasheets Context Search

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    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    irfpf50sihfpf502002/95/eco-247ac+2o-22trademarks2011/65/eu PDF

    IRFPF50

    Abstract: SiHFPF50
    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    irfpf50sihfpf50o-247aco-220ab+2o-21811-mar-11 PDF

    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original
    irfpf50sihfpf502002/95/eco-247ac+22011/65/eu12-mar-12 PDF

    Contextual Info: IRFPF50_RC, SiHFPF50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irfpf50sihfpf50an60909-jul-10 PDF

    IRFPF50

    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    irfpf50sihfpf502002/95/eco-247ac+2o-22trademarks2011/65/eu PDF

    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching


    Original
    irfpf50sihfpf50o-247o-220+112-mar-07 PDF

    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    irfpf50sihfpf50o-247aco-220ab+4o-2182002/95/ec2011/65/eujs709a PDF

    IRFPF50

    Abstract: SiHFPF50
    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching


    Original
    irfpf50sihfpf50o-24718-jul-08 PDF

    IRFPF50

    Abstract: SiHFPF50
    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching


    Original
    irfpf50sihfpf50o-24718-jul-08 PDF

    Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    irfpf50sihfpf502002/95/eco-247ac+2o-22hay11-mar-11 PDF