SIHFI624G Search Results
SIHFI624G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRFI624GContextual Info: IRFI624G, SiHFI624G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 1.1 • Sink to Lead Creepage Distance = 4.8 mm |
Original |
IRFI624G, SiHFI624G O-220 18-Jul-08 IRFI624G | |
IRFI624GContextual Info: IRFI624G, SiHFI624G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 1.1 • Sink to Lead Creepage Distance = 4.8 mm |
Original |
IRFI624G, SiHFI624G O-220 18-Jul-08 IRFI624G | |
IRFI624GContextual Info: IRFI624G, SiHFI624G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 1.1 • Sink to Lead Creepage Distance = 4.8 mm |
Original |
IRFI624G, SiHFI624G O-220 12-Mar-07 IRFI624G |