SIHFBG20 Search Results

IRFBG20

Abstract: 81262
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the

IRFBG20

Contextual Info: IRFBG20,SiHFBG20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBG20

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBG20

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the