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Vishay Intertechnologies


Vishay Intertechnologies SIHFBE30L-GE3 MOSFETs MOSFET N-CHANNEL 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHFBE30L-GE3					1 $2.69 10 $1.72 100 $1.17 1000 $0.86 10000 $0.77	Get Quote
TME	SIHFBE30L-GE3				1	1 $2.18 10 $1.96 100 $1.55 1000 $1.44 10000 $1.44	Get Quote

SIHFBE30L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
s8143 Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3 Contextual Info: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration	Original	IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3	PDF
Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11	PDF
Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 18-Jul-08	PDF
AN609 Abstract: IRFBE30L IRFBE30S SiHFBE30S Contextual Info: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFBE30S SiHFBE30S IRFBE30L SiHFBE30L AN609, 20-Apr-10 AN609	PDF
Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 2011/65/EU 2002/95/EC. 2002/95/EC	PDF
Contextual Info: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration	Original	IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-262) O-263) 12-Mar-07	PDF
Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11	PDF