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    SIHFBC30 Price and Stock

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    Vishay Intertechnologies SIHFBC30AL-GE3

    MOSFETs MOSFET N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHFBC30AL-GE3 992
    • 1 $2.12
    • 10 $1.33
    • 100 $0.88
    • 1000 $0.62
    • 10000 $0.53
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    Vishay Intertechnologies SIHFBC30AS-GE3

    MOSFETs MOSFET N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHFBC30AS-GE3
    • 1 $2.12
    • 10 $1.33
    • 100 $0.88
    • 1000 $0.62
    • 10000 $0.53
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    TME SIHFBC30AS-GE3 1
    • 1 $1.27
    • 10 $1.15
    • 100 $0.91
    • 1000 $0.85
    • 10000 $0.85
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    Vishay Intertechnologies SIHFBC30ASTRR-GE3

    MOSFETs MOSFET N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHFBC30ASTRR-GE3
    • 1 $2.12
    • 10 $1.33
    • 100 $0.88
    • 1000 $0.62
    • 10000 $0.53
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    TME SIHFBC30ASTRR-GE3 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.76
    • 10000 $0.76
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    EBV Elektronik SIHFBC30ASTRR-GE3 49 Weeks 800
    • 1 -
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    Vishay Intertechnologies SIHFBC30ASTRL-GE3

    MOSFETs MOSFET N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHFBC30ASTRL-GE3
    • 1 $2.12
    • 10 $1.33
    • 100 $0.88
    • 1000 $0.62
    • 10000 $0.53
    		Get Quote

    Vishay Siliconix SIHFBC30STRL-GE3

    SIHFBC30STRL-GE3 N-CHANNEL MOSFET TRANSISTOR, 3.6 A, 600 V, 3-PIN D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHFBC30STRL-GE3 Bulk 700 5 Weeks 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
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    Find more SIHFBC30 price and stock on Findchips.com

    SIHFBC30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		irfbc30asihfbc30a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-220ab2002/95/ec+22011/65/eujs709a PDF

    74139m

    Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
    Contextual Info: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irfbc30asihfbc30aan60920-apr-10+374139m4139 temperature74139 PDF

    IRFBC30

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-220ab11-mar-11 PDF

    Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		irfbc30asihfbc30ao-220irfbc30apbf+2sihfbc30amerchantability12-mar-07 PDF

    SiHFBC30L

    Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating


    Original     		irfbc30ssihfbc30sirfbc30lsihfbc30l PDF

    SiHFBC30L

    Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		irfbc30ssihfbc30sirfbc30lsihfbc30l PDF

    Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		irfbc30asihfbc30a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-220ab2002/95/ec+22011/65/eujs709a PDF

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-220ab2002/95/ec+22011/65/eujs709a PDF

    Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		irfbc30asihfbc30a2002/95/eco-220ab+111-mar-11 PDF

    IRFBC30

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-22012-mar-07 PDF

    Contextual Info: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		irfbc30asirfbc30alsihfbc30assihfbc30al+3o-262o-26312-mar-07 PDF

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-220ab2002/95/ec+22011/65/eujs709a PDF

    SiHFBC30L

    Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		irfbc30ssihfbc30sirfbc30lsihfbc30l PDF

    SiHFBC30L

    Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		irfbc30ssihfbc30sirfbc30lsihfbc30l PDF

    9571

    Abstract: AN609 IRFBC30
    Contextual Info: IRFBC30_RC, SiHFBC30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irfbc30sihfbc30an60920-apr-10+19571 PDF

    Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		irfbc30asihfbc30a2002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRFBC30

    Abstract: IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AL-E3 SiHFBC30AS SiHFBC30AS-E3 IRFBC30ALPBF
    Contextual Info: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		irfbc30asirfbc30alsihfbc30assihfbc30al+7o-262o-26318-jul-08irfbc30sihfbc30al-e3sihfbc30as-e3irfbc30alpbf PDF

    IRFBC30

    Abstract: irfbc30 vishay
    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc30o-22018-jul-08+1irfbc30 vishay PDF

    SiHFBC30L

    Abstract: IRFBC30 AN-994 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
    Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating


    Original     		irfbc30ssihfbc30sirfbc30lsihfbc30l+4irfbc30an-994sihfbc30l-e3sihfbc30s-e3 PDF

    Contextual Info: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irfbc30assihfbc30asirfbc30alsihfbc30al+4o-262o-2632002/95/ec2011/65/eu PDF

    Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		irfbc30asihfbc30a2002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irfbc30sihfbc302002/95/eco-220ab+111-mar-11 PDF