SIHF23N60E Search Results
SIHF23N60E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIHF23N60E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A TO-220 | Original | 7 |
SIHF23N60E Price and Stock
Vishay Siliconix SIHF23N60E-GE3MOSFET N-CH 600V 23A TO220 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF23N60E-GE3 | Reel | 1,000 |
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Vishay Intertechnologies SIHF23N60E-GE3N-CHANNEL 600V - Tape and Reel (Alt: SIHF23N60E-GE3) |
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SIHF23N60E-GE3 | Reel | 22 Weeks | 1,000 |
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SIHF23N60E-GE3 | 915 |
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SIHF23N60E-GE3 | 1 |
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SIHF23N60E-GE3 | 23 Weeks | 50 |
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SIHF23N60E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses |
Original |
SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced switching and conduction losses |
Original |
SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses |
Original |
SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHF23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHF23N60E AN609, 4220u 2602m 6200m 5226m 02-Apr-13 |