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    SIHB33N60E Search Results

    SIHB33N60E Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHB33N60EF-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO-263 Original PDF 216.8KB
    SIHB33N60E-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 33A TO-263 Original PDF 9
    SIHB33N60ET1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO263 Original PDF 228.22KB
    SIHB33N60ET5-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO263 Original PDF 228.22KB
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    SIHB33N60E Price and Stock

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    Vishay Siliconix SIHB33N60EF-GE3

    MOSFET N-CH 600V 33A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB33N60EF-GE3 Bulk 953 1
    • 1 $7.34
    • 10 $5.21
    • 100 $3.82
    • 1000 $3.25
    • 10000 $3.25
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    Vishay Siliconix SIHB33N60E-GE3

    MOSFET N-CH 600V 33A D2PAK
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    DigiKey SIHB33N60E-GE3 Tube 791 1
    • 1 $5.81
    • 10 $4.60
    • 100 $3.34
    • 1000 $2.77
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    New Advantage Corporation SIHB33N60E-GE3 2,000 1
    • 1 -
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    • 1000 $4.23
    • 10000 $3.91
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    Vishay Siliconix SIHB33N60ET1-GE3

    MOSFET N-CH 600V 33A TO263
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    DigiKey () SIHB33N60ET1-GE3 Digi-Reel 1
    • 1 $6.82
    • 10 $4.89
    • 100 $3.96
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    SIHB33N60ET1-GE3 Cut Tape 1
    • 1 $6.82
    • 10 $4.89
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    SIHB33N60ET1-GE3 Reel 800
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    New Advantage Corporation SIHB33N60ET1-GE3 1,600 1
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    • 1000 $4.27
    • 10000 $3.94
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    Vishay Siliconix SIHB33N60ET5-GE3

    MOSFET N-CH 600V 33A TO263
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    DigiKey SIHB33N60ET5-GE3 Reel 800
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    Vishay Intertechnologies SIHB33N60ET1-GE3

    - Bulk (Alt: SIHB33N60ET1-GE3)
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    Avnet Americas SIHB33N60ET1-GE3 Bulk 22 Weeks 800
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    Mouser Electronics SIHB33N60ET1-GE3 1,651
    • 1 $6.96
    • 10 $4.99
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    • 1000 $3.77
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    Newark SIHB33N60ET1-GE3 Reel 800
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    TTI SIHB33N60ET1-GE3 Reel 800
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    Chip 1 Exchange SIHB33N60ET1-GE3 24,960
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    Chip Stock SIHB33N60ET1-GE3 11,500
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    Wuhan P&S SIHB33N60ET1-GE3 19,200 1
    • 1 $9.75
    • 10 $9.75
    • 100 $3.25
    • 1000 $2.93
    • 10000 $2.93
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    SIHB33N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHB33N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHB33N60E AN609, 6079m 2386m 3612m 2145m 03-Apr-14 PDF

    Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V 0.099 Qg (Max.) (nC) 150 Qgs (nC) 24 Qgd (nC) 42 Configuration Single D APPLICATIONS


    Original     		SiHB33N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg


    Original     		SiHB33N60EF O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.099 Qg (Max.) (nC) 150 Qgs (nC) 24 Qgd (nC) 42 Configuration Single D Low Figure-of-Merit (FOM): Ron x Qg


    Original     		SiHB33N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiHB33N60E

    Abstract: s12 mosfet SIHB33N60E-GE3
    Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		SiHB33N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s12 mosfet SIHB33N60E-GE3 PDF

    SIHB33N60E

    Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		SiHB33N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.099 Qg (Max.) (nC) 150 Qgs (nC) 24 Qgd (nC) 42 Configuration Single D Low Figure-of-Merit (FOM): Ron x Qg


    Original     		SiHB33N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V 0.099 Qg (Max.) (nC) 150 Qgs (nC) 24 Qgd (nC) 42 Configuration Single D APPLICATIONS


    Original     		SiHB33N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E PDF

    Contextual Info: Product Group: Vishay Siliconix, MOSFETs / November 2014 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com Vishay Releases its First Two 600 V Fast Body Diode N-Channel MOSFETs for Soft Switching Topologies Product Benefits: •  


    Original     		O-220, O-263, O-220F, O-247AC SiHP28N60EF SiHF28N60EF SiHB28N60EF SiHG28N60EF SiHG33N60EF SiHP33N60EF PDF