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    SIHB22N65E Search Results

    SIHB22N65E Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHB22N65E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A D2PAK Original PDF 218.92KB
    SIHB22N65E-T1-GE3
    		Vishay Siliconix N-CHANNEL 650V Original PDF 219.06KB 9
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    SIHB22N65E Price and Stock

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    Vishay Siliconix SIHB22N65E-T1-GE3

    N-CHANNEL 650V
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    DigiKey () SIHB22N65E-T1-GE3 Cut Tape 752 1
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    SIHB22N65E-T1-GE3 Digi-Reel 1
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    SIHB22N65E-T1-GE3 Reel 800
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    Vishay Siliconix SIHB22N65E-GE3

    MOSFET N-CH 650V 22A D2PAK
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    DigiKey SIHB22N65E-GE3 Tube 1,000
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    Vishay Intertechnologies SIHB22N65E

    - Tape and Reel (Alt: SIHB22N65E)
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    Avnet Americas SIHB22N65E Reel 1,000
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    Vishay Intertechnologies SIHB22N65E-T1-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHB22N65E-T1-GE3)
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    Avnet Americas SIHB22N65E-T1-GE3 Reel 22 Weeks 800
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    Mouser Electronics SIHB22N65E-T1-GE3
    • 1 $5.22
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    Arrow Electronics SIHB22N65E-T1-GE3 800 34 Weeks 800
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    TTI SIHB22N65E-T1-GE3 Reel 5,600 800
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    TME SIHB22N65E-T1-GE3 800 800
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    Vishay Intertechnologies SIHB22N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHB22N65E-GE3)
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    Avnet Americas SIHB22N65E-GE3 Reel 22 Weeks 1,000
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    Mouser Electronics SIHB22N65E-GE3
    • 1 $4.86
    • 10 $3.89
    • 100 $3.15
    • 1000 $2.16
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    TME SIHB22N65E-GE3 1
    • 1 $4.87
    • 10 $4.38
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    EBV Elektronik SIHB22N65E-GE3 23 Weeks 50
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    SIHB22N65E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 700 VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single APPLICATIONS


    Original     		SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHB22N65E AN609, 7606u 6283m 6682m 0922u 23-Jul-14 PDF

    Contextual Info: SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 700 VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single D APPLICATIONS


    Original     		SiHB22N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF