SIGE LNA Search Results

Contextual Info: TST0950 SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency applications up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommunication applications, due to its lower costs and excellent

germanium transistors PNP

Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,

TST0950

Contextual Info: TST0950 SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency applications up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommunication applications, due to its lower costs and excellent

Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

SGA-8343Z

Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

SGA8343z

Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

ST0950

Contextual Info: Temic TST0950 S e mi c o n d u c t o r s SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency appli­ cations up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommu­

SGA8343Z

Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

Contextual Info: Tem ic TST0950 S e m i c o n d u c t o r s SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency appli­ cations up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommu­

UHV 806

Abstract: metal detector plans seven wonders OC 140 germanium transistor microwaves Amplifier Research metal detector door bell chime receiver SiGe POWER TRANSISTOR frankfurt HFA3861
Contextual Info: SPECIAL REPORT SiGe Advances SiGe Technology Makes Practical Advances This novel device technology is making major strides in RF and digital integrated circuits for highfrequency, high-speed communications systems. JACK BROWNE Publisher/Editor ILICON germanium SiGe is a semiconductor technology made for

A83Z

Abstract: A83Z data a83 sot transistor A83 sga8343z SGA-8343 SGA-8343Z RFMD sga-8343Z 34A83
Contextual Info: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to

samsung bluetooth

Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
Contextual Info: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to

free transistor and ic equivalent data

Abstract: AN697 germanium npn germanium transistors NPN MAX2247 MAX2321 MAX2323 MAX2338 5Ghz lna transistor MAX2641
Contextual Info: Maxim > App Notes > BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Keywords: silicon germanium, SiGe, rfic, rf design, lna, rfics, rf ics Mar 15, 2000 APPLICATION NOTE 697 Silicon Germanium SiGe Technology Enhances Radio Front-End Performance

SiGe 2577

Abstract: NEC NESG2030M04 nec 2401 wireless communication NESG2030M04 2SC5761 NESG2030M04-A NESG2030M04-T2 NESG2030M04-T2-A S21E nec LE 737
Contextual Info: NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm

BFP620 applications note

Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
Contextual Info: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The

X2321

Abstract: MAX2320 MAX2321
Contextual Info: World’s F irst SiGe Receive Fi Get Incredible Linearity and Noise Pe Maxim’s new family of SiGe receive front-end ICs sets the industry standard for noise, linearity, and supply current for the LNA+mixer function in CDMA, W-CDMA, TDMA, PDC, and GSM cellular

TSSO8 Package

Contextual Info: TST0950 SiGe – Low-Noise Amplifier 900 MHz Description The TST0950 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

Contextual Info: TST0950 SiGe – Low-Noise Amplifier 900 MHz Description The TST0950 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

TSSO8 Package

Abstract: atmel Reflow soldering RF amplifer TST0951 TST0951-MFDG3
Contextual Info: TST0951 SiGe – Low-Noise Amplifier 1900 MHz Description The TST0951 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

TSSO8 Package

Contextual Info: TST0951 SiGe – Low-Noise Amplifier 1900 MHz Description The TST0951 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

Contextual Info: TST0951 SiGe – Low-Noise Amplifier 1900 MHz Description The TST0951 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

TST0951

Abstract: TST0951B-MFDG3
Contextual Info: TST0951 SiGe – Low-Noise Amplifier 1900 MHz Description The TST0951 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

TST0950

Abstract: TST0950B-MFDG3
Contextual Info: TST0950 SiGe – Low Noise Amplifier 900 MHz Description The TST0950 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery

TST0950-MFDG3

Abstract: TST0950
Contextual Info: TST0950 SiGe – Low Noise Amplifier 900 MHz Description The TST0950 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery