SIEMENS EM 35 Search Results

C501

Abstract: C515A SAB-C515A SAF-C515A SAH-C515A P-MQFP-80
Contextual Info: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. Microcomputer Components 8-Bit CMOS Microcontroller C515A / e d Data Sheet 07.99 . s en r/ em ucto i .s w ond w ic w / :/ em

bf506

Contextual Info: SIEMENS PNP Silicon RF Transistor • BF 506 For VHF mixer and oscillator stages Type Marking Ordering Code BF 506 - Q62702-F534 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-em itter voltage VCEO 35

Contextual Info: SIEMENS BP 103B SILICON NF-. PHOTOTRANSISTOR Package Dimensions in Inches mm . 4 4 9 ( 11 .4 ) 232 (5 9 ) Em ttter 951 (24 2 ) 323 (8 2) FEATURES Maximum Ratings * Silicon NPN Epitaxial Phototransistor * Acceptance Angle, 50° Operating and Storage Temperature Range (Top, Tstg)

siemens 250 87

Contextual Info: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz

Contextual Info: 35E D • Ô53b320 0 0 1 7 2 7 2 b « S I P NPN Silicon AF Transistor SMBTA 20 _ SIEMENS/ SPCL-. SEMICONDS T ' l l ' l j _ • • High DC current gain Low collector-em itter saturation voltage Type Marking Ordering code for versions in bulk Ordering code for

BCX70J

Contextual Info: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz

Contextual Info: 32E D • Ô53b350 QQlbb^b R « S I P PNP Silicon AFTransistors T '- 'l 1*7 SIEMENS/ SPCL-, SEMICONDS T - A I - I / • • • • BC^ 67 BCW68 For general AF applications High current gain Low collector-em ltter saturation voltage Complementary types: BCW 65, BCW 66 NPN

Contextual Info: M7E D • «E3Sb05 0D3Db70 □ »SIEG SAB 8088 SIEMENS AKTIENGESELLSCHAF 8-Bit Microprocessor “ Preliminary SAB 8088 5 MHz SAB 8088-2 8 MHz SAB 8088-1 • 8-bit data bus interface • 16-bit internal architecture • Direct addressing capability to 1 M byte o f m em ory

Contextual Info: . 1 35E D • _ 62313350 0017331 7 ■ ISIP SXT A 42 SXT A 43 NPN Silicon High Voltage Transistors SIEMENS/ SPCLi SEMICONDS • High breakdown voltage • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e for v e rs io n s in b u lk

74LS04C

Abstract: gd5f 80515K m8ab
Contextual Info: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports

3Tg 21 10 siemens

Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Contextual Info: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper

Contextual Info: SFH 4413 SIEMENS LOW POWER LASERDIODE IN T 018 PACKAGE Package Dimensions in mm 20 S p a c in g FEATURES Maximum Ratings • InGaAsP/lnP MCRW -Laser Diode Output power ratings refer to the total em itted power at front window. The operating tem perature of the subm ount is identical with the case

Contextual Info: bOE J> m fl235t.D5 O G 4 T M3 1 57^ « S I E G SIEMENS SI EM EN S A K T I E N G E S E L L S C H A F " P 4 < o - l3 '2 S Nonvolatile Memory 4-Kbit E2PROM with I 2C-Bus and Write Protection SDA 3546 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in

TCA 965 APPLICATION

Abstract: TCA965B TCA 965 P-DIP-14-1 "Window Discriminator" tca965
Contextual Info: bOE » • ö23SbOS 004*1107 DE? « S I E G SIEMENS SI EM ENS A K T I E N 6 E S E L L S C H A F T '- T Window Discriminator b -G 3 TCA 965 B Preliminary Bipolar 1C Features • Two window settings - direct setting of lower and upper edge voltage window edges

Contextual Info: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk

81c80a

Abstract: SAE81C80-A
Contextual Info: SIEMENS CMOS Dual-Port RAM SAE 81C80 A C M O S 1C F eatures • P rocessor interface w ith address and da ta bus plus sig n a ls a l e , w r , RD • 8051-, 8 0 9 6-co m pa tib le tim ing • M em ory ca p a city 504 bytes • All fu n ction s fully sta tic excl. oscilla to r w atchdog

SAB-R2020

Abstract: ax1130 SAB-R2000 SAB-R3000
Contextual Info: SIEMENS SAB-R3020/SAB-R2020 Write Buffer Advance Inform ation • • T e m p o ra ry s to ra g e b u ffers to e n h an ce • • • o th er m a n u fa ctu re rs. p ro c e s s o r s p e e d s . • SAB-R3000 RISC Integer CPU M em ory I/O S ubsystem ! Subsystem

sab80186

Abstract: SAB 80186
Contextual Info: M7E D SIEMENS m ö 2 3S bD S 0 0 3 0 7 1 0 0 « S I E G SI EM EN S A K T I E N G E S E L L S C H A F High-Integration 16-Bit Microprocessor SAB 80186 Preliminary SAB 80186 8 M H z SAB 80186-1 10 M H z • In te g ra te d fe a tu re set - e n h a n ce d SAB 8086-2 CPU

Contextual Info: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!

UE43-2

Contextual Info: i+7E D • 6235b05 QG33ÖÖ7 7 «SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus and 1 K Write Protection SDA 3526-1 Preliminary Data MOS IC Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

intel 8035

Abstract: 8035 instruction set SAB 8048 p D 8035 intel 8048 8035
Contextual Info: 47E » SIEM EN S • ô535bDS DDETSÜB * « S I E G SIEMENS AKT IENGESELLSCHAF - r - m 8 Bit Single Chip Microcontroller - f t - o SAB 8035/8048 obsolescent Type Extended Temperature Range: - 40 to + 85 C - 40 to + 110 "C SAB 8048-P-T40/85 SAB 8048-P-T40/110

SIEMENS EC 230 99

Abstract: siemens 80c515 C537 RAMTEX C500 TRACE32-ICE icemaster-pe C535 USP-51E AX51
Contextual Info: Development Support Microcontrollers 8 Bit Topic: All Subjects These lists do not claim for completeness and may contain typing mistakes. If You need urther information call the Mailbox: +49 89 498431 Page 1 # 4 25.07.1996 Hardware 80 C 5x5/80C5x7/C50x family