SIDE VIEW INFRARED DIODE SHARP Search Results

side view infrared diode sharp

Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
Contextual Info: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle

GL100MNxMP

Abstract: GL100MN0MP GL100MN1MP PT100MC0MP GL100MN0MP1 PT100MC
Contextual Info: GL100MNxMP Series GL100MNxMP Series Compact, Surface Mount Type Infrared Emitting Diode • Features ■ Outline Dimensions 1. Compact and thin package 2. Surface mount type 3. 2-way mounting;top view/side view 4. Reflow soldering 5. High output type:GL100MN1MP

GL100MN1MP

Abstract: GL100MN0MP
Contextual Info: GL100MNxMP Series Compact, Surface Mount Type Infrared Emitting Diode GL100MNxMP Series • Features ■ Outline Dimensions 1. Compact and thin package 2. Surface mount type 3. 2-way mounting ; top view/side view 4. Reflow soldering 5. High output type : GL100MN1MP

Contextual Info: GL4910 SHARP GL4910 Side View Type Infrared Emitting Diode for Camera AF Automatic Focusing • Features ■ Outline Dimensions (Unit : mm) 1. Small spot light diameter for easy beam diaphragming (* Apparent emission diameter : TYP. 0 0.32 mm) 2. Uniform emission intensity on chip emitting surface

GL4910

Abstract: diaphragm
Contextual Info: GL4910 GL4910 Side View Type Infrared Emitting Diode for Camera AF Automatic Focusing • Features ■ Outline Dimensions 1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. φ 0.32 mm) 5.0 ± 0.2 Gate burr (2.5 )

GL4910

Abstract: IR3e
Contextual Info: GL4910 GL4910 Side View Type Infrared Emitting Diode for Camera AF Automatic Focusing • Features ■ Outline Dimensions 1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. φ 0.32 mm) 5.0 ± 0.2 Gate burr (2.5 )

ultrasonic distance circuit design

Abstract: 2 MHz ultrasonic sensor distance measure ultrasonic GL4800 GL4800E0000F PT4800
Contextual Info: GL4800E0000F GL4800E0000F Infrared Emitting Diode • Features ■ Agency Approvals/Compliance 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle Δθ: ±30° TYP. Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN.

gl480e00000f

Abstract: GL480QE0000F alcohol sensor data sheet
Contextual Info: GL480E00000F GL480E00000F Infrared Emitting Diode • Features ■ Agency Approvals/Compliance 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle Δθ: ±13° TYP. Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN.

PT4110

Abstract: GL4100
Contextual Info: GL4100 GL4100 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions 3.0 Detector center 2 - C0.5 1. Mouses 2. Track balls 0.7 Pale red transparent epoxy resin 1.4 4.0 0.3MAX. 4˚ 4˚ 0.1MAX. 1.7 2 - 0.45 +- 0.3 0.1 2 1

PT4110

Abstract: GL4100
Contextual Info: GL4100 GL4100 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions 3.0 Detector center 2 - C0.5 1. Mouses 2. Track balls 0.7 Pale red transparent epoxy resin 1.4 4.0 0.3MAX. 4˚ 4˚ 0.1MAX. 1.7 2 - 0.45 +- 0.3 0.1 2 1

Contextual Info: SHARP GL4100 GL4100 Side View and Thin Flat Type infrared Emitting Diode • Features ■ Outline Dimensions U n it: mm 1. C o m p ac t flat package 2. W id e b e a m angle 2 - C0.5 - 3.0 — 1.8 —■ 0.7 Pale red transparent 0.7_i epoxy resin Detector center

Contextual Info: GL4200 SHARP GL4200 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions U n it: m m 1. Compact flat package (Volume : 2/3 max. of GL480) 3 .0 2- 2. Wide beam angle C O .5 1 to con O ö i1)2 < Î r5 CT) ■ Applications

telefunken ta 750

Abstract: telefunken ta 750 amplifier telefunken ta 350 w200 diode telefunken wiring diagrams TFDU6100E CAM35C44 FDC37C669 FDC37N769 PC87108
Contextual Info: TELEFUNKEN Semiconductors TFDU6100E/TFDS6500E/TFDT6500E 2.7–5.5V Fast Infrared Transceiver Module Family FIR, 4 Mbit/s Features D Compliant to IrDA 1.2 (Up to D D D D D D 4 Mbit/s), HP–SIR, Sharp ASK and TV Remote Wide Operating Voltage Range (2.7 to 5.5 V )

rover

Abstract: J1000
Contextual Info: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.

smd diode 777

Abstract: Ss 24 DIODE SMD SMD DIODE BOOK sr smd diode opic Diode 1_b SMD
Contextual Info: TENTATIVE NEW PRODUCT INFORMA TION GL1F21/GL1F211 IR DATA COMMUNICATION EMITTER SMP type IR Emitting Diode for IR Data Communication Conform to IrDAI.O I • General description Outline dimensions (Unitmm) SHARPs GL1F21/211 are SMD type IR emitting diode

sensor BPW34 application note

Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
Contextual Info: V ishay I ntertechnolog y, I nc . Optoelectronics – Products for Industrial Applications AND TEC I INNOVAT O L OGY Guide to Industrial Applications N HN OPTOELECTRONICS O 19 62-2012 TABLE OF CONTENTS

TSSP4038

Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2

InSb spectral response

Abstract: BARNES ENGINEERING metal detectors circuit D13E metal detector 140C D03E D04EJ D05E Barnes Engineering Company
Contextual Info: F D P CORP. BARNES ENGRG E D 0 CO RP/ BARNES ENGRG _ _4 5 C 0 0 4 5 2 4S DE .jB O S T b S S D . T-41-4r 0D0D4Sa 0 |~ Bulletin 2-312 BARNES Barnes Engineering Company 30 Commerce Road Stamford, Connecticut 06904 Telephone 203 348-5381 The most sensitive detectors in the near infrared

GP1U501X

Abstract: GP1U52X GP1U521Y sharp GP1U501X GP1U521X GP1U501 GP1U503X GP1U50x GP1U GP1U52
Contextual Info: 1Q EDI ûlflcmû G000523Ü| SHARP ELEK/ flELEC DIV Light detecting units v^y/ ^ 7 • GENERAL DESCRIPTION ■ FEATURES Sharp light detecting units combine a PIN photodiode and a signal processing circuit in one unit. Due to their compact packages, they are

Vishay TYPE 40D

Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2

infrared RC6 protocol philips

Contextual Info: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation Description The TFDU6300 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR), HPSIR , Sharp ASK® and carrier based remote control

RC5 philips tfdu6300

Abstract: 293D EN60825-1 IEC60825-1 TFDU6300 TFDU6300-TR3 TFDU6300-TT3 TFDU6301 infrared RC6 protocol philips RC6 Infrared
Contextual Info: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation Description The TFDU6300 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR), HPSIR , Sharp ASK® and carrier based remote control

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

293D

Abstract: EN60825-1 IEC60825-1 TFDU6300 TFDU6301 TFDU6301-TR3 TFDU6301-TT3 06-APR-06
Contextual Info: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR), HPSIR , Sharp ASK® and carrier based remote control