SIC WAFER 100 MM Search Results

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

Contextual Info: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been

thyristor lifetime

Contextual Info: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.

Contextual Info: HIGH POWER SWITCH Silicon Carbide Thyristors usher in the Smart Grid Revolution These devices offer near-theoretical, on-state blocking voltage and switching performance Global demand for high-efficiency, green energy technologies and products has placed new challenges on the electrical grid, on efficient exploitation of renewable energy

Contextual Info: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have

Contextual Info: Rapidly Maturing SiC Junction Transistors Featuring Current Gain β > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation S.G. Sundaresan, S. Jeliazkov, B. Grummel, R. Singh GeneSiC Semiconductor, Inc. 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA

Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.

Contextual Info: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States

M-20488-001

Abstract: Contact image sensor cmos image sensor AMIS-720649 PI6049A cis Linear Image Sensor amis Contact Image Sensor
Contextual Info: AMIS-720649: Contact Image Sensor Data Sheet 1.0 General Description AMI Semiconductor’s AMIS-720649 PI6049A contact image sensor (CIS) is a 600 dots per inch (dpi) resolution linear image sensor, which employs AMI Semiconductor’s proprietary CMOS image sensing technology. The sensor contains an on-chip output amplifier,

PI6049A

Abstract: cmos SENSOR 15um
Contextual Info: REVISION NUMBER : REV 2 PAGES : 1 of 13 DATE : 2-13-04 PI6049A Contact Image Sensor Data Sheet PI6049A Data Sheet Key Features • • • • • • • • • •

Contextual Info: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

JFET siced

Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
Contextual Info: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany

1200 dpi cis sensor

Abstract: PI6050D 1200DPI contact image sensor 1200dpi
Contextual Info: REVISION NUMBER : REV A PAGES :Page 1 of 15 DATE : 1-31-05 PI6050D Contact Image Sensor Data Sheet PI6050D Data Sheet Key Features • • • • • • • • •

WiMax Amplifiers and Their Application

Abstract: rohde schwarz BPSK transmitters wimax transmitter BPSK low frequency bpsk BPSK demodulator 16 QAM Transmitter SMU200A 32 QAM Transmitter block diagram
Contextual Info: WiMAX Amplifiers And Their Application By Jerry Lee Chief Technical Officier of Wireless Products MicroWave Technology, Inc. MwT With the demand for wireless personal communications growing exponentially, complex modulation schemes have been deployed that offer the spectral efficiency to support the

IEC60721

Abstract: IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies
Contextual Info: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3
Contextual Info: IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

IEC60721-3-3

Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Contextual Info: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3 IEC60721 L4926E
Contextual Info: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

IEC60721-3-3

Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
Contextual Info: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

IDC06S60C

Abstract: IDT06S60C
Contextual Info: IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC08S60C

Abstract: IDT08S60C D0135
Contextual Info: IDC08S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC05S60C

Abstract: IDT05S60C silicon carbide
Contextual Info: IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC04S60C

Abstract: IDT04S60C SCHOTTKY 4A 600V silicon carbide
Contextual Info: IDC04S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior