SIC THYRISTOR Search Results

anode gate thyristor

Contextual Info: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

thyristor lifetime

Contextual Info: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.

Contextual Info: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

Contextual Info: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

Contextual Info: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

Contextual Info: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

Contextual Info: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

Contextual Info: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

MOS Controlled Thyristor

Abstract: thyristor lifetime
Contextual Info: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT

40C1500

Abstract: T1200 T1200N T1209N k005
Contextual Info: E G-AKTIENGESELLSCHAFT SIC D • QDSTmS D00b513 □ M A E 6 6 p T 1200 N T 1209 N Typ enreihe/Type range T1200N 1200 1400 1600 1800 _T 1 2 0 9 N

Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.

DIN40040

Abstract: T35N TM200
Contextual Info: E G-AKTIEN6ESELLSCHAFT SIC B • 005^415 QDGbü7fl 1 ■AE 3G T35N Typenrelhe/Type range_T 3 5 N 400* 600 800 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm, Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung

uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Contextual Info: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­

Contextual Info: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have

s2177

Contextual Info: E ¿-A K TIEN G ESELLSCH A FT SIC D • D02T41S OQDblOB 4 ■ AE66 T85N Typenreihe/Type ränge T85N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d r m , U r h m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

Contextual Info: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic

P-Channel IGBT

Contextual Info: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to

T218N

Contextual Info: G- A K T I ENG ES EL LS CH AF T SIC D • 002^415 Q0Gbl42 3 ■ AEGG 0 T218N Typenreihe/Type range_ T218N 400 * 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte UoRMi U r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung