SIC DIODE DIE Search Results

FF600R12IS4F

Contextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten PrimePACK™2 with fast IGBT2 and SiC diode for high switching frequency IGBT-Wechselrichter / IGBT-inverter

FF600R12IS4F

Contextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten und NTC PrimePACK™2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC

Contextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2, SiC Diode und NTC für hochfrequentes Schalten PrimePACK™2 with fast IGBT2, SiC diode and NTC for high switching frequency IGBT-Wechselrichter / IGBT-inverter

12 VOLT 2 AMP smps circuit

Abstract: circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v
Contextual Info: Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM PFC boost diode applications because of the superior reverse recovery characteristics – zero reverse recovery current. Selection of

Contextual Info: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1  1 E72873 T 2 Features MOSFET T Symbol Conditions

MKE11R600DCGFC

Abstract: E72873 12 mke
Contextual Info: MKE 11R600DCGFC CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω with SiC Diode Boost topology Electrically isolated back surface 2500 V electrical isolation ISOPLUS i4™ 3 SiC D 4 1  1 T 2 Symbol Conditions VDSS TVJ = 25°C Maximum Ratings

d02s60c

Abstract: idv02s60c d02s60 JESD22 d02s6
Contextual Info: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3
Contextual Info: IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

IEC60721

Abstract: IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies
Contextual Info: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

MS 1117

Abstract: IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE
Contextual Info: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

IEC60721-3-3

Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
Contextual Info: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Contextual Info: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC05S60C

Abstract: IDT05S60C silicon carbide
Contextual Info: IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC04S60C

Abstract: IDT04S60C SCHOTTKY 4A 600V silicon carbide
Contextual Info: IDC04S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC08S60C

Abstract: IDT08S60C D0135
Contextual Info: IDC08S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

IDC06S60C

Abstract: IDT06S60C
Contextual Info: IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3
Contextual Info: IDC05S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

IEC60721-3-3

Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Contextual Info: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3 IEC60721 L4926E
Contextual Info: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

JESD22

Contextual Info: TM 1200V thinQ! IDC05S120E SiC Schottky Diode Features: Applications: A • • • • • C • • • • Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Contextual Info: S6203 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 20A*1 31nC QC lFeatures lInner circuit 1 Shorter recovery time C) 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: S6302 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 10A*1 34nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type