SIB452 Search Results

Contextual Info: New Product SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 190 2.4 at VGS = 4.5 V 1.5 2.6 at VGS = 2.5 V 1.48 6.0 at VGS = 1.8 V 0.4 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: New Product SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 190 2.4 at VGS = 4.5 V 1.5 2.6 at VGS = 2.5 V 1.48 6.0 at VGS = 1.8 V 0.4 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

sib452dk-t1-ge3

Contextual Info: New Product SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 190 2.4 at VGS = 4.5 V 1.5 2.6 at VGS = 2.5 V 1.48 6.0 at VGS = 1.8 V 0.4 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

443587

Abstract: 7443 AN609
Contextual Info: SiB452DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

68832

Abstract: SC-75 SiB452DK
Contextual Info: New Product SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 190 2.4 at VGS = 4.5 V 1.5 2.6 at VGS = 2.5 V 1.48 6.0 at VGS = 1.8 V 0.4 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

marking code vishay SILICONIX

Contextual Info: New Product SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 190 2.4 at VGS = 4.5 V 1.5 2.6 at VGS = 2.5 V 1.48 6.0 at VGS = 1.8 V 0.4 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SPICE Device Model SiB452DK www.vishay.com Vishay Siliconix N-Channel 190 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

sib452dk-t1-ge3

Abstract: SC-75 68832 sib452dk sib452
Contextual Info: New Product SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 190 2.4 at VGS = 4.5 V 1.5 2.6 at VGS = 2.5 V 1.48 6.0 at VGS = 1.8 V 0.4 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SPICE Device Model SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiB452DK

Contextual Info: SPICE Device Model SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with

schematic diagram atx Power supply 500w

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Arduino Mega2560

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Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

SiB914

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with

220v AC voltage stabilizer schematic diagram

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs