SIA922EDJ Search Results

Contextual Info: SPICE Device Model SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: New Product SiA922EDJ Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () Max. ID (A) 0.064 at VGS = 4.5 V 4.5 0.072 at VGS = 3.0 V 4.5 0.080 at Vgs = 2.5 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®

Contextual Info: SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.064 at VGS = 4.5 V 4.5a 0.072 at VGS = 3.0 V 4.5a 0.080 at VGS = 2.5 V 4.5a 0.400 at VGS = 1.8 V 0.2 • TrenchFET Power MOSFET

Contextual Info: SiA922EDJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance: