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4833 Abstract: AN609 Contextual Info: Si8423DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8423DB AN609 20-Dec-05 4833	PDF

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4833

Abstract: AN609
Contextual Info: Si8423DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

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Si8423DB AN609 20-Dec-05 4833

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