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    Si8422DB

    Abstract: 8422 e8422 040-BE
    Contextual Info: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    si8422dbsi8422db-t1-e118-jul-088422+2e8422040-be PDF

    Contextual Info: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    si8422dbsi8422db-t1-e12002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    si8422dbsi8422db-t1-e111-mar-11 PDF

    Contextual Info: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    si8422dbsi8422db-t1-e12011/65/eu2002/95/ec+112-mar-12 PDF