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JAN 7289 Abstract: 9506 transistor 3669 AN609 Contextual Info: Si7993DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si7993dp an609 10-jan-06 jan 7289 +29506 transistor 3669	PDF

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JAN 7289

Abstract: 9506 transistor 3669 AN609
Contextual Info: Si7993DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

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si7993dp an609 10-jan-06 jan 7289 +2

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