SI7991DP Search Results
SI7991DP Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI7991DP | Vishay Siliconix | MOSFETs | Original | 69.39KB | 5 | ||
| SI7991DP-T1 |
|
Dual P-Channel 30-V (D-S) MOSFET | Original | 69.4KB | 5 |
SI7991DP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si7991DP
Abstract: Si7991DP-T1
|
Original |
si7991dp07-mmsi7991dp-t1s-32127--rev+1 | |
|
Contextual Info: SPICE Device Model Si7991DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si7991dp0-to-10v01-oct-03 | |
|
Contextual Info: Si7991DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.023 @ VGS = −10 V −10.2 0.035 @ VGS = −4.5 V −8.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package |
Original |
si7991dp07-mmsi7991dp-t108-apr-05 | |
Si7991DP
Abstract: Si7991DP-T1
|
Original |
si7991dp07-mmsi7991dp-t118-jul-08 | |
|
Contextual Info: Si7991DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.023 @ VGS = −10 V −10.2 0.035 @ VGS = −4.5 V −8.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package |
Original |
si7991dp07-mmsi7991dp-t108-apr-05 | |
|
Contextual Info: Si7991DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.023 @ VGS = - 10 V - 10.2 0.035 @ VGS = - 4.5 V - 8.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package |
Original |
si7991dp07-mmsi7991dp-t1s-31918--rev+1 |