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m 830 Abstract: AN609 si7907 60944 Contextual Info: Si7907EDN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si7907edn an609 29-nov-05 m 830 +2si7907 60944	PDF

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m 830

Abstract: AN609 si7907 60944
Contextual Info: Si7907EDN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

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si7907edn an609 29-nov-05 m 830 +2

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