SI7904 Search Results
SI7904 Datasheets (9)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI7904BDN-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 6A 1212-8 | Original | 13 | |||
SI7904BDN-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 6A PPAK 1212-8 | Original | 13 | |||
Si7904DN |
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Thermoelectric Cooler Controller | Original | 409.68KB | 24 | ||
SI7904DN |
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Dual N-Channel 20-V (D-S) MOSFET | Original | 42.73KB | 4 | ||
Si7904DN | Vishay Intertechnology | Dual N-Channel 20-V (D-S) MOSFET | Original | 42.73KB | 4 | ||
SI7904DN-DS | Vishay Telefunken | DS-Spice Model for Si7904DN | Original | 229.08KB | 3 | ||
Si7904DN SPICE Device Model |
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Dual N-Channel 20-V (D-S) MOSFET | Original | 229.08KB | 3 | ||
SI7904DN-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.3A 1212-8 | Original | 11 | |||
SI7904DN-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.3A 1212-8 | Original | 11 |
SI7904 Price and Stock
Vishay Siliconix SI7904DN-T1-E3MOSFET 2N-CH 20V 5.3A PPAK 1212 |
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SI7904DN-T1-E3 | Reel | 3,000 |
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Vishay Siliconix SI7904BDN-T1-E3MOSFET 2N-CH 20V 6A PPAK 1212 |
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SI7904BDN-T1-E3 | Cut Tape | 1 |
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Vishay Siliconix SI7904DN-T1-GE3MOSFET 2N-CH 20V 5.3A PPAK 1212 |
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SI7904DN-T1-GE3 | Reel | 3,000 |
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Vishay Siliconix SI7904BDN-T1-GE3MOSFET 2N-CH 20V 6A PPAK 1212 |
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SI7904BDN-T1-GE3 | Digi-Reel | 1 |
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SI7904BDN-T1-GE3 | Bulk | 10 |
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Vishay Intertechnologies SI7904BDN-T1-E3- Tape and Reel (Alt: SI7904BDN-T1-E3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7904BDN-T1-E3 | Reel | 3,000 |
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SI7904BDN-T1-E3 | Reel | 3,000 |
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SI7904BDN-T1-E3 | 44 |
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SI7904BDN-T1-E3 | 60 |
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SI7904 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated |
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Si7904DN Si7904DN-T1-E3 Si7904DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si7904BDN Si7904BDN-T1-E3 Si7904BDN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si7904DNContextual Info: SPICE Device Model Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7904DN 21-Jul-01 | |
Contextual Info: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si7904BDN Si7904BDN-T1-E3 Si7904BDN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
74453
Abstract: Si7904BDN-T1-E3 SI7904DN-T1-E3 Si7904DN
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Si7904BDN Si7904DN Si7904BDN-T1-E3 Si7904DN-T1-E3 Si7904BDN-T1 Si7904DN-T1 03-Nov-06 74453 | |
Si7904DNContextual Info: SPICE Device Model Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7904DN 18-Jul-08 | |
c206a
Abstract: Si7904BDN-T1-E3
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Si7904BDN Si7904BDN-T1-E3 Si7904BDN-T1-GE3 18-Jul-08 c206a | |
si7904Contextual Info: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si7904BDN Si7904BDN-T1-E3 Si7904BDN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7904 | |
74389Contextual Info: SPICE Device Model Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7904BDN S-70624Rev. 09-Apr-07 74389 | |
Si7904DNContextual Info: Si7904DN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • TrenchFET Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK® |
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Si7904DN 07-mm Si7904DN-T1 08-Apr-05 | |
Contextual Info: Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated |
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Si7904DN Si7904DN-T1-E3 Si7904DN-T1-GE3 11-Mar-11 | |
Contextual Info: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si7904BDN Si7904BDN-T1-E3 Si7904BDN-T1-GE3 11-Mar-11 | |
4558
Abstract: M-826 AN609 Si7904DN
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Si7904DN AN609 17-Jan-06 4558 M-826 | |
Contextual Info: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si7904BDN Si7904BDN-T1-E3 Si7904BDN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si7904DN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • TrenchFET Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK® |
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Si7904DN 07-mm Si7904DN-T1 08-Apr-05 | |
Contextual Info: Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated |
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Si7904DN Si7904DN-T1-E3 Si7904DN-T1-GE3 08-Apr-05 | |
338 u
Abstract: AN609 64371
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Si7904BDN AN609 03-Aug-07 338 u 64371 | |
SI7904DN-T1-E3
Abstract: Si7904DN
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Si7904DN Si7904DN-T1-E3 Si7904DN-T1-GE3 18-Jul-08 | |
Si7904DN
Abstract: S0498
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Si7904DN 07-mm S-04989--Rev. 29-Oct-01 S0498 | |
c206a
Abstract: 74409 Si7904BDN-T1-E3
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Si7904BDN Si7904BDN-T1-E3 08-Apr-05 c206a 74409 | |
Contextual Info: Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated |
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Si7904DN Si7904DN-T1-E3 Si7904DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7904BDN 18-Jul-08 | |
Contextual Info: Si7904BDN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS RoHS COMPLIANT |
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Si7904BDN Si7904BDN-T1-E3 18-Jul-08 | |
Si7904DNContextual Info: SPICE Device Model Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7904DN S-60244Rev. 20-Feb-06 |