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    SI7884 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI7884BDP-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 58A PPAK 8SOIC Original PDF 9
    SI7884BDP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 58A PPAK 8SOIC Original PDF 9
    SI7884DP
    		Vishay TRANS FET 40V 20A SO-8 Original PDF 72.51KB 5
    Si7884DP
    		Vishay Intertechnology N-Channel 40-V (D-S) MOSFET Original PDF 44.7KB 4
    SI7884DP
    		Vishay Siliconix N-Channel 40-V (D-S) MOSFET Original PDF 59.51KB 4
    Si7884DP SPICE Device Model
    		Vishay N-Channel 40-V (D-S) MOSFET Original PDF 195.08KB 3
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    SI7884 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SI7884BDP-T1-E3

    SI7884BDP-T1-E3 Vishay MOSFETs Transistor N-CH 40V 58A 8-Pin PowerPAK SO EP T/R - Arrow.com
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    Verical () SI7884BDP-T1-E3 3,000 3,000
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    SI7884BDP-T1-E3 2,739 5
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    Avnet Americas SI7884BDP-T1-E3 Tape & Reel 3,000
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    Arrow Electronics () SI7884BDP-T1-E3 3,000 52 Weeks 3,000
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    SI7884BDP-T1-E3 Cut Strips 2,739 52 Weeks 1
    • 1 $1.58
    • 10 $1.55
    • 100 $1.50
    • 1000 $1.43
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    Newark () SI7884BDP-T1-E3 Cut Tape 3,000
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    SI7884BDP-T1-E3 Tape & Reel 3,000
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    TTI SI7884BDP-T1-E3 Reel 3,000
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    Bristol Electronics SI7884BDP-T1-E3 3,637
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    Vishay Intertechnologies SI7884BDP-T1-GE3

    - Tape and Reel (Alt: SI7884BDP-T1-GE3)
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    Avnet Americas () SI7884BDP-T1-GE3 Tape & Reel 3,000
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    SI7884BDP-T1-GE3 Ammo Pack 3,000
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    Mouser Electronics SI7884BDP-T1-GE3 49
    • 1 $4.43
    • 10 $2.26
    • 100 $1.62
    • 1000 $1.33
    • 10000 $1.31
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    Newark () SI7884BDP-T1-GE3 Cut Tape 3,000 3,000
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    SI7884BDP-T1-GE3 Tape & Reel 3,000
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    • 10000 $1.26
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    TTI SI7884BDP-T1-GE3 Reel 3,000
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    Bristol Electronics SI7884BDP-T1-GE3 2,397
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    EBV Elektronik SI7884BDP-T1-GE3 53 Weeks 3,000
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    Wuhan P&S SI7884BDP-T1-GE3 21,000 1
    • 1 $12.79
    • 10 $12.79
    • 100 $4.27
    • 1000 $3.84
    • 10000 $3.84
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    Vishay Intertechnologies SI7884BDP-T1-BE3

    GE3 recommended, BE3 intended primarily for USA based customers and shipments, PCN-SIL-0062020 refers - Tape and Reel (Alt: SI7884BDP-T1-BE3)
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    Avnet Americas SI7884BDP-T1-BE3 Tape & Reel 46 Weeks 6,000
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    Mouser Electronics SI7884BDP-T1-BE3
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    TTI SI7884BDP-T1-BE3 Reel 6,000
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    Vishay Intertechnologies SI7884DP-T1-E3

    Trans MOSFET N-CH 40V 12A 8-Pin PowerPAK SO EP T/R
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    Bristol Electronics SI7884DP-T1-E3 743
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    Quest Components SI7884DP-T1-E3 9
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    Vishay Intertechnologies SI7884DP-T1

    Trans MOSFET N-CH 40V 12A 8-Pin PowerPAK SO EP T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI7884DP-T1 39
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    Quest Components () SI7884DP-T1 263
    • 1 $3.64
    • 10 $3.64
    • 100 $1.82
    • 1000 $1.68
    • 10000 $1.68
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    SI7884DP-T1 30
    • 1 $3.64
    • 10 $2.27
    • 100 $2.27
    • 1000 $2.27
    • 10000 $2.27
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    Find more SI7884 price and stock on Findchips.com

    SI7884 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si7884BDP-T1-E3

    Abstract: Si7884BDP
    Contextual Info: Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 21 nC APPLICATIONS COMPLIANT


    Original     		si7884bdpsi7884bdp-t1-e308-apr-05 PDF

    Si7884DP

    Abstract: Si7884DP-T1-E3
    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		si7884dpsi7884dp-t1-e3si7884dp-t1-ge318-jul-08 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		si7884dp07-mmsi7884dp-t1s-40951--rev+110-may-04 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		si7884dp07-mmsi7884dp-t108-apr-05 PDF

    Si7884BDP-T1-E3

    Abstract: Si7884BDP Si7884BDP-T1-GE3
    Contextual Info: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si7884bdpsi7884bdp-t1-e3si7884bdp-t1-ge311-mar-11 PDF

    Si7884DP-T1-E3

    Abstract: Si7884DP Si7884DP-T1
    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with


    Original     		si7884dpsi7884dp-t1si7884dp-t1-e3s-52555-rev+119-dec-05 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		si7884dp07-mmsi7884dp-t1s-31727--rev+118-aug-03 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		si7884dp07-mmsi7884dp-t1s-31727--rev+118-aug-03 PDF

    1.4044

    Abstract: 9303 AN609
    Contextual Info: Si7884ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si7884adpan60903-jan-081.4044+19303 PDF

    Si7884DP

    Contextual Info: Si7884DP New Product Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original     		si7884dp07-mms-21341--rev05-ug-02 PDF

    Si7884BDP

    Contextual Info: SPICE Device Model Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		si7884bdp18-jul-08 PDF

    Si7884DP

    Contextual Info: SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si7884dps-60244rev20-feb-06 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		si7884dpsi7884dp-t1-e3si7884dp-t1-ge311-mar-11 PDF

    Si7884DP

    Abstract: us1150
    Contextual Info: \\\ SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si7884dp0-to-10v06-jun-02us1150 PDF

    Si7884DP

    Contextual Info: SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si7884dp18-jul-08 PDF

    SI7884BDP-T1-E3

    Abstract: Si7884BDP Si7884BDP-T1-GE3
    Contextual Info: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si7884bdpsi7884bdp-t1-e3si7884bdp-t1-ge318-jul-08 PDF

    Si7884BDP

    Abstract: A4521
    Contextual Info: SPICE Device Model Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		si7884bdps-82024-rev01-sep-08a4521 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with


    Original     		si7884dp07-mmsi7884dp-t1si7884dp-t1--e3+108-apr-05 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		si7884dp07-mmsi7884dp-t1s-32077--rev+113-oct-03 PDF

    20463

    Abstract: Si7884DP
    Contextual Info: Si7884DP New Product Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original     		si7884dp07-mms-20463--rev15-apr-02+120463 PDF

    Contextual Info: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si7884bdpsi7884bdp-t1-e3si7884bdp-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si7884bdpsi7884bdp-t1-e3si7884bdp-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		si7884dpsi7884dp-t1-e3si7884dp-t1-ge308-apr-05 PDF

    AN609

    Abstract: Si7884DP 13512
    Contextual Info: Si7884DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si7884dpan60919-jan-0613512 PDF