SI7882DP Search Results

Si7882DP

Contextual Info: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY VDS V 12

SI7882DP-T1-E3

Abstract: Si7882DP Si7882DP-T1
Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Contextual Info: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

Contextual Info: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Si7882DP

Contextual Info: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

Si7882DP

Abstract: Si7882DP-T1 Si7882DP-T1-E3
Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

Si7882DP

Abstract: Si7882DP-T1 Si7882DP-T1-E3
Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

Si7882DP

Contextual Info: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7882DP

Contextual Info: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Si7882DP

Abstract: Si7882DP-T1
Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY VDS V 12

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

smd transistor M21

Abstract: 4607 n-channel
Contextual Info: SC4607 Very Low Input, MHz Operation, High Efficiency Synchronous Buck POWER MANAGEMENT Description Features The SC4607 is a voltage mode step down buck regulator controller that provides accurate high efficiency power conversion from an input supply range of 2.25V to 5.5V.

TRANSISTOR C 6090 npn

Abstract: TRANSISTOR C 6090 FZ 87 1500 6.3V ADP1621 transistor irf 649 21605 lcd driver bh510 6TPE150M rubycon 100v 22uf IRF7470
Contextual Info: Constant-Frequency, Current-Mode Step-Up DC/DC Controller ADP1621 FEATURES TYPICAL APPLICATION CIRCUIT VIN = 3.3V L1 4.7µH VOUT = 5V 1A D1 C3 1µF 10V C4 0.1µF 10V IN PIN R1 35.7kΩ 1% RS 80Ω CS ADP1621 SDSN GATE COMP C2 120pF RCOMP 9.09kΩ CCOMP 1.8nF

transistor irf 649

Abstract: ADP1621 BH510-1006 50-ZL-220-M-10 FZ 89 1500 6.3V
Contextual Info: FEATURES TYPICAL APPLICATION CIRCUIT VIN = 3.3V L1 4.7µH C3 1µF 10V C4 0.1µF 10V IN R1 35.7kΩ 1% RS 80Ω ADP1621 SDSN GATE COMP C2 120pF RCOMP 9.09kΩ CCOMP 1.8nF M1 COUT1 1µF 10V COUT2 10µF 10V R2 11.5kΩ 1% COUT3 150µF 6.3V x2 PGND FREQ FB GND

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

CS15

Abstract: SC2441A SC2441ATETRT TSSOP-28 c25 mosfet
Contextual Info: SC2441A 1.8V to 20V Input 2-Phase Synchronous Step-down Controllers with Step-up Converter POWER MANAGEMENT Description Features The SC2441A is a programmable frequency dual independent or dual/multiple phase single output peak current-mode step-down switching regulator controller. It

marking mv sot23 mosfet

Abstract: sot 26 Dual N-Channel MOSFET 1.5V to 012V dc dc boost converter
Contextual Info: LTC3836 Dual 2-Phase, No RSENSETM Low VIN Synchronous Controller FEATURES DESCRIPTION n The LTC 3836 is a 2-phase dual output synchronous step-down switching regulator controller with tracking that drives external N-channel power MOSFETs using few external components. The constant-frequency current