SI7732 Search Results

c4927

Abstract: si7732
Contextual Info: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

69814

Abstract: C4927
Contextual Info: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

S-80732

Contextual Info: SPICE Device Model Si7732DP Vishay Siliconix N-Channel 20V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

Contextual Info: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

9412 transistor

Abstract: 9412 transistor pdf datasheet AN609
Contextual Info: Si7732DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].